公开(公告)号：US20240237566A1

公开(公告)日：2024-07-11

申请号：US18443283

申请日：2024-02-15

申请人： IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)

发明人： Jea Gun PARK ,  Dae Seong WOO ,  Soo Min JIN ,  Sang Hong PARK ,  Sung Mok JUNG

IPC分类号： H10N70/00 ,  G06N3/063 ,  H10B63/00 ,  H10N70/20

CPC分类号： H10N70/8845 ,  G06N3/063 ,  H10B63/80 ,  H10N70/026 ,  H10N70/24 ,  H10N70/841

摘要： Disclosed is an artificial synapse device including an amorphous carbon oxide-based resistance change memory device and a method of fabricating the same, and more particularly to a technology for providing an artificial synapse device capable of implementing the characteristics of biological synapses responsible for memory and information transfer in the human brain using a resistance change memory device. More particularly, the artificial synapse device according to an embodiment of the provided includes a first electrode; a second electrode disposed to face the first electrode; and a switching layer formed of an amorphous carbon oxide deposited by injecting oxygen when sputtering carbon into a target between the first electrode and the second electrode, wherein the artificial synapse device has synaptic characteristics wherein a value of an output current changes gradually when a same voltage of either set voltage or reset voltage is repeatedly applied to the first electrode.

公开(公告)号：US20230011421A1

公开(公告)日：2023-01-12

申请号：US17480699

申请日：2021-09-21

申请人： IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)

发明人： Jea Gun PARK ,  Soo Min JIN ,  Dong Won KIM ,  Hea Jee KIM ,  Dae Seong WOO ,  Sang Hong PARK ,  Sung Mok JUNG ,  Dong Eon KIM

IPC分类号： H01L45/00 ,  H01L27/24

摘要： A selector according to an embodiment of the present disclosure includes a first electrode; a second electrode disposed opposite to the first electrode; an ion supply layer disposed between the first electrode and the second electrode to be on the side of the first electrode and doped with a metal, wherein the doped metal diffuses toward the second electrode; a switching layer disposed between the first electrode and the second electrode to be on the side of the second electrode, wherein the doped metal diffuses from the ion supply layer into the switching layer so that metal concentration distribution inside the switching layer is changed to generate metal filaments; and a diffusion control layer inserted between the ion supply layer and the switching layer, wherein the diffusion control layer serves to adjust electrical characteristics related to the generated metal filaments as the amount of the diffusing metal is adjusted in proportion to a thickness of the diffusion control layer.