公开(公告)号：US20120240850A1

公开(公告)日：2012-09-27

申请号：US13137913

申请日：2011-09-21

申请人： Ikunori Kobayashi ,  Jung Woo Ko ,  Sang Shin Lee ,  Taek Kyo Kang

发明人： Ikunori Kobayashi ,  Jung Woo Ko ,  Sang Shin Lee ,  Taek Kyo Kang

IPC分类号： B05C11/00

CPC分类号： C23C14/042 ,  C23C16/042

摘要： A deposition mask that is placed on a mask frame by a tensile force includes first through nth corrected patterns obtained by correcting first through nth initially designed patterns, which are arranged sequentially in a first direction, a row direction and a column direction in view of the tensile force applied to the deposition mask. Outermost sides of the first through nth corrected patterns include first outermost sides extending in a second direction perpendicular to the first direction and second outermost sides extending in a direction parallel to the first direction. The first outermost sides have a first curvature and are recessed inwardly with respect to the first and the nth initially designed patterns. The second outermost sides have a second curvature and protrude outwardly with respect to the first through nth initially designed patterns.

摘要翻译： 通过拉伸力放置在掩模框架上的沉积掩模包括通过校正第一至第n初始设计的图案而获得的第一至第n校正图案，其中第一至第n校正图案按照第一方向，第四方向和第四方向 施加到沉积掩模的张力。 第一至第n校正图案的最外侧包括沿垂直于第一方向的第二方向延伸的第一最外侧和在平行于第一方向的方向延伸的第二最外侧。 第一最外侧具有第一曲率并且相对于第一和第n初始设计的图案向内凹入。 第二最外侧具有第二曲率并且相对于第一至第n初始设计的图案向外突出。