公开(公告)号：US20110114953A1

公开(公告)日：2011-05-19

申请号：US12771180

申请日：2010-04-30

申请人： Il Doo KIM ,  Dong Hun KIM ,  Seung Hun CHOI

发明人： Il Doo KIM ,  Dong Hun KIM ,  Seung Hun CHOI

IPC分类号： H01L29/786 ,  H01L21/44

CPC分类号： H01L29/4908 ,  H01L21/02118 ,  H01L21/02266 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

摘要： Disclosed are a transistor including a gate insulation layer and an organic passivation layer of a polymer thin film, and a fabrication method thereof. The transistor comprises a substrate, a gate electrode formed on the substrate, a gate insulation layer including a polymethacrylic acid thin film, formed on the gate electrode and the substrate, a channel layer formed on the gate insulation layer, source electrode and drain electrode formed on the channel layer so as to expose at least a part of the channel layer, and an organic passivation layer including a polymethacrylic acid thin film, formed on the source electrode, drain electrode and the partially exposed channel layer. The method for fabricating a transistor comprises steps of forming a gate electrode on a substrate, forming a gate insulation layer of a polymethacrylic acid thin film on the gate electrode and the substrate, forming a channel layer on the gate insulation layer, forming source electrode and drain electrode on the channel layer so as to expose at least a part of the channel layer, and forming an organic passivation layer of a polymethacrylic acid thin film on the source electrode, drain electrode and the partially exposed channel layer.

摘要翻译： 公开了一种包括聚合物薄膜的栅极绝缘层和有机钝化层的晶体管及其制造方法。 晶体管包括基板，形成在基板上的栅电极，形成在栅电极和基板上的聚甲基丙烯酸薄膜的栅极绝缘层，形成在栅极绝缘层上的沟道层，形成的源电极和漏电极 在沟道层上露出沟道层的至少一部分，以及形成在源电极，漏电极和部分曝光沟道层上的包含聚甲基丙烯酸薄膜的有机钝化层。 制造晶体管的方法包括以下步骤：在衬底上形成栅电极，在栅电极和衬底上形成聚甲基丙烯酸薄膜的栅极绝缘层，在栅绝缘层上形成沟道层，形成源电极和 在电极层上露出至少一部分沟道层，在源电极，漏电极和部分露出的沟道层上形成聚甲基丙烯酸薄膜的有机钝化层。