公开(公告)号：US20200083332A1

公开(公告)日：2020-03-12

申请号：US16561023

申请日：2019-09-05

Applicant: Industrial Technology Research Institute

Inventor： Heng Lee ,  Shin-Yi Huang ,  Tao-Chih Chang

IPC: H01L29/24 ,  H01L29/66 ,  H01L29/78 ,  H01L21/02 ,  H01L29/51

Abstract: A semiconductor device includes a substrate, a channel layer, a first electrode layer, a second electrode layer, and a gate structure. The substrate includes a first gallium oxide layer. The channel layer is disposed on the substrate, where the channel layer is a second gallium oxide layer. The first electrode layer and the second electrode layer are disposed on the channel layer. The gate structure is disposed on the channel layer between the first electrode layer and the second electrode layer. The gate structure is on the channel layer or the gate structure has a bottom portion extending into the channel layer.