公开(公告)号：US20250063772A1

公开(公告)日：2025-02-20

申请号：US18940769

申请日：2024-11-07

Applicant: Industrial Technology Research Institute

Inventor： Po-Chun Yeh ,  Hsiang-Chun Wang

IPC: H01L29/06 ,  H01L23/473 ,  H01L29/08 ,  H01L29/66 ,  H01L29/778

Abstract: A semiconductor structure including a substrate, a conductive layer, and a semiconductor device is provided. The substrate includes a first surface, a second surface opposite to the first surface, at least one insulating vacancy extending from the first surface toward the second surface, and a through hole passing through the substrate. The conductive layer fills in the through hole. The semiconductor device is disposed on the second surface and is electrically connected to the conductive layer, and the at least one insulating vacancy is distributed corresponding to the semiconductor device.