公开(公告)号：US20230366739A1

公开(公告)日：2023-11-16

申请号：US17993942

申请日：2022-11-24

Applicant: Industrial Technology Research Institute

Inventor： Heng-Chung CHANG ,  Chih-Ya Tsai ,  Hui-Chi Su ,  Jing-Yuan Lin

IPC: G01J5/20

CPC classification number: G01J5/20

Abstract: An infrared device is provided. The infrared device includes a substrate, a metal layer, a first semiconductor layer, an absorber layer, and a second semiconductor layer. The metal layer is disposed on the substrate. The first semiconductor layer is disposed on the substrate and electrically connected to the metal layer. A cavity is formed between the first semiconductor layer and the metal layer. The absorber layer is disposed on the first semiconductor layer. The second semiconductor layer is disposed on the absorber layer and electrically connected to the first semiconductor layer. The TCR of the first semiconductor layer is different from that of the second semiconductor layer.