公开(公告)号：US20210175425A1

公开(公告)日：2021-06-10

申请号：US16708446

申请日：2019-12-10

Applicant: Industrial Technology Research Institute

Inventor： Shih-Hsiung Wu ,  Yung-Liang Tung ,  Kuo-Wei Huang ,  Pei-Ting Chiu ,  Hung-Ru Hsu ,  Jia-Ming Lin

IPC: H01L51/00 ,  H01L51/42

Abstract: Provided are a method for forming a perovskite layer and a method for forming a structure comprising a perovskite layer. The method for forming a perovskite layer includes the following steps: coating a perovskite precursor material on a substrate; and performing a heating treatment to the substrate; and irradiating the perovskite precursor material with infrared light.