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公开(公告)号：US20230102199A1
公开(公告)日：2023-03-30
申请号：US17574140
申请日：2022-01-12
Applicant: Industrial Technology Research Institute
Inventor： Pei-Ting Chiu , Yung-Liang Tung , Shih-Hsiung Wu , Kuo-Wei Huang , Jung-Pin Chiou , Jen-An Chen , Qiao-Zhi Guan
Abstract: Provided is a method for preparing lead iodide, which controls the crystal form of lead iodide through temperature, including: dissolving a lead compound in a first acid solution and adding an iodine compound to form a reaction solution including the first lead iodide; and heating the reaction solution to a temperature of 60° C. or more and standing at a constant temperature, to obtain the second lead iodide, wherein a peak intensity of the (003) crystal plane of the second lead iodide is greater than or equal to a peak intensity of the (110) crystal plane. Provided is also a method for preparing the perovskite film.
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公开(公告)号：US20220123242A1
公开(公告)日：2022-04-21
申请号：US17121887
申请日：2020-12-15
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor： Kuo-Wei Huang , Yung-Liang Tung , Jung-Pin Chiou , Pei-Ting Chiu , Shih-Hsiung Wu
Abstract: Provided is a perovskite film including crystal grains with a crystalline structure of [A][B][X]3.n[C], wherein [A], [B], [X], [C] and n are as defined in the specification.
The present disclosure further provides a precursor composition of perovskite film, method for producing of perovskite film, and semiconductor element including such films, as described above. With the optimal lattice arrangement, the perovskite film shows the effects of small surface roughness, and the semiconductor element thereof can thus achieve high efficiency and stability even with large area of film formation, thereby indeed having prospect of the application.-
公开(公告)号：US20220069221A1
公开(公告)日：2022-03-03
申请号：US17035681
申请日：2020-09-29
Applicant: Industrial Technology Research Institute
Inventor： Kuo-Wei Huang , Yung-Liang Tung , Shih-Hsiung Wu , Jen-An Chen , Pei-Ting Chiu , Yu-Hung Chen
Abstract: Provided are a perovskite film and a manufacturing method thereof. The method includes the following steps. A perovskite precursor material is coated in a linear direction on a substrate with a temperature between 100° C. and 200° C., wherein a concentration of the perovskite precursor material is between 0.05 M and 1.5 M. An infrared light irradiation is performed on the perovskite precursor material to cure the perovskite precursor material to form a thin film including a compound represented by formula (1). The perovskite film has a single 2D phase structure or has a structure in which a 3D phase structure is mixed with a single 2D phase structure. (RNH3)2MA(n−1)M1nX(3n+1) formula (1), wherein the definitions of R, MA, M1, X, and n are as defined above.
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Patent Agency Ranking
公开(公告)号：US11778839B2
公开(公告)日：2023-10-03
申请号：US17121887
申请日：2020-12-15
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor： Kuo-Wei Huang , Yung-Liang Tung , Jung-Pin Chiou , Pei-Ting Chiu , Shih-Hsiung Wu
Abstract: Provided is a perovskite film including crystal grains with a crystalline structure of [A][B][X]3.n[C], wherein [A], [B], [X], [C] and n are as defined in the specification.
The present disclosure further provides a precursor composition of perovskite film, method for producing of perovskite film, and semiconductor element including such films, as described above. With the optimal lattice arrangement, the perovskite film shows the effects of small surface roughness, and the semiconductor element thereof can thus achieve high efficiency and stability even with large area of film formation, thereby indeed having prospect of the application.-
5.发明申请METHOD FOR FABRICATING ABSORBING LAYER OF SOLAR CELL AND THERMAL TREATMENT DEVICE THEREOF 审中-公开制造太阳能电池吸收层及其热处理装置的方法公开(公告)号：US20140179053A1
公开(公告)日：2014-06-26
申请号：US14135929
申请日：2013-12-20
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor： Tsung-Shin Wu , Shih-Hsiung Wu , Chia-Wen Chang , Hung-Ru Hsu
IPC: H01L31/18
CPC classification number: H01L31/072 , C23C14/0021 , C23C14/0623 , C23C14/24 , H01L21/02557 , H01L21/02568 , H01L21/02631 , H01L31/0326 , Y02E10/50
Abstract: A method for fabricating an absorbing layer of a solar cell and a thermal treatment device thereof adapted for forming an absorbing layer on a substrate are disclosed. The method includes the following steps. First, a solid-phase vapor source in a chamber and an absorbing layer precursor on a substrate are maintained by a predetermined distance. The solid-phase vapor source contains tin. The absorbing layer precursor contains copper, zinc, tin and sulfur. The temperature inside the chamber is raised to a forming temperature, so that the absorbing layer precursor forms an absorbing layer on the substrate.
Abstract translation: 公开了一种用于制造太阳能电池的吸收层的方法及其适用于在衬底上形成吸收层的热处理装置。 该方法包括以下步骤。 首先，将室内的固相蒸气源和基板上的吸收层前体保持规定的距离。 固相蒸气源含有锡。 吸收层前体含有铜，锌，锡和硫。 室内的温度升高到成形温度，使得吸收层前体在衬底上形成吸收层。
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6.发明申请METHOD FOR PREPARING ABSORBING LAYER OF SOLAR CELL AND THERMAL TREATMENT DEVICE THEREOF 审中-公开制备太阳能电池吸收层及其热处理装置的方法公开(公告)号：US20140179048A1
公开(公告)日：2014-06-26
申请号：US13908256
申请日：2013-06-03
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor： Tzung-Shin Wu , Shih-Hsiung Wu , Yu-Yun Wang , Hung-Ru Hsu , Ho-Min Chen
IPC: H01L31/18
CPC classification number: H01L31/1864 , H01L31/0326 , Y02E10/50 , Y02P70/521
Abstract: A method for preparing an absorbing layer of a solar cell includes the following steps. An absorbing layer precursor containing at least one group XIV element is loaded on a substrate. A solid vapor source containing a group XIV element, the same as the group XIV element in the absorbing layer precursor is provided. The solid vapor source corresponds to the absorbing layer precursor. The solid vapor source and the absorbing layer precursor are kept apart by a distance. A heating process is performed so that the absorbing layer precursor forms an absorbing layer, the solid vapor source is vaporized and generates a gas containing the group XIV element, and the gas containing the group XIV element inhibits the effusion of the group XIV element of the absorbing layer precursor so that the proportion of the group XIV element in the formed absorbing layer is consistent.
Abstract translation: 制备太阳能电池吸收层的方法包括以下步骤。 将含有至少一种XIV族基团的吸收层前体加载到基底上。 提供了含有与吸收层前体中的第XIV族元素相同的基团XIV元素的固体蒸气源。 固体蒸汽源对应于吸收层前体。 固体蒸汽源和吸收层前体保持分开一段距离。 进行加热处理，使得吸收层前体形成吸收层，固体蒸气源蒸发并产生含有第XIV族元素的气体，并且含有第ⅩⅣ族元素的气体抑制第XIV族元素的渗出 吸收层前体，使得所形成的吸收层中的基团XIV元素的比例是一致的。
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公开(公告)号：US11271157B1
公开(公告)日：2022-03-08
申请号：US17035681
申请日：2020-09-29
Applicant: Industrial Technology Research Institute
Inventor： Kuo-Wei Huang , Yung-Liang Tung , Shih-Hsiung Wu , Jen-An Chen , Pei-Ting Chiu , Yu-Hung Chen
Abstract: Provided are a perovskite film and a manufacturing method thereof. The method includes the following steps. A perovskite precursor material is coated in a linear direction on a substrate with a temperature between 100° C. and 200° C., wherein a concentration of the perovskite precursor material is between 0.05 M and 1.5 M. An infrared light irradiation is performed on the perovskite precursor material to cure the perovskite precursor material to form a thin film including a compound represented by formula (1). The perovskite film has a single 2D phase structure or has a structure in which a 3D phase structure is mixed with a single 2D phase structure. (RNH3)2MA(n−1)M1nX(3n+1) formula (1), wherein the definitions of R, MA, M1, X, and n are as defined above.
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公开(公告)号：US20210175425A1
公开(公告)日：2021-06-10
申请号：US16708446
申请日：2019-12-10
Applicant: Industrial Technology Research Institute
Inventor： Shih-Hsiung Wu , Yung-Liang Tung , Kuo-Wei Huang , Pei-Ting Chiu , Hung-Ru Hsu , Jia-Ming Lin
Abstract: Provided are a method for forming a perovskite layer and a method for forming a structure comprising a perovskite layer. The method for forming a perovskite layer includes the following steps: coating a perovskite precursor material on a substrate; and performing a heating treatment to the substrate; and irradiating the perovskite precursor material with infrared light.
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