Thermoelectric Devices and Methods for Forming Thermoelectric Devices

    公开(公告)号:US20190131508A1

    公开(公告)日:2019-05-02

    申请号:US16177805

    申请日:2018-11-01

    Abstract: A thermoelectric device includes a plurality of first semiconductor mesa structures having a first conductivity type and a plurality of second semiconductor mesa structures having a second conductivity type. First semiconductor mesa structures of the plurality of first semiconductor mesa structures and second semiconductor mesa structures of the plurality of second semiconductor mesa structures are electrically connected in series. The thermoelectric device further includes a glass structure made of at least one of a borosilicate glass, boron-zinc-glass and a low transition temperature glass. The glass structure is arranged laterally between the first semiconductor mesa structures of the plurality of first semiconductor mesa structures and the second semiconductor mesa structures of the plurality of second semiconductor mesa structures. The glass structure electrically insulates the first semiconductor mesa structures of the plurality of first semiconductor mesa structures laterally from the second semiconductor mesa structures of the plurality of second semiconductor mesa structures.

    Thermoelectric devices and methods for forming thermoelectric devices

    公开(公告)号:US11641779B2

    公开(公告)日:2023-05-02

    申请号:US17208495

    申请日:2021-03-22

    Abstract: A method includes forming a plurality of first semiconductor mesa structures at a first semiconductor substrate. The first semiconductor substrate has a first conductivity type. The method further includes forming a plurality of second semiconductor mesa structures at a second semiconductor substrate. The second semiconductor substrate has a second conductivity type. The method further includes providing a glass substrate between the first semiconductor substrate and the second semiconductor substrate. The method includes connecting the first semiconductor substrate to the second semiconductor substrate so that at least a portion of the glass substrate is located laterally between the first semiconductor mesa structures of the plurality of first semiconductor mesa structures and the second semiconductor mesa structures of the plurality of second semiconductor mesa structures.

    Thermoelectric Devices and Methods for Forming Thermoelectric Devices

    公开(公告)号:US20210210669A1

    公开(公告)日:2021-07-08

    申请号:US17208495

    申请日:2021-03-22

    Abstract: A method includes forming a plurality of first semiconductor mesa structures at a first semiconductor substrate. The first semiconductor substrate has a first conductivity type. The method further includes forming a plurality of second semiconductor mesa structures at a second semiconductor substrate. The second semiconductor substrate has a second conductivity type. The method further includes providing a glass substrate between the first semiconductor substrate and the second semiconductor substrate. The method includes connecting the first semiconductor substrate to the second semiconductor substrate so that at least a portion of the glass substrate is located laterally between the first semiconductor mesa structures of the plurality of first semiconductor mesa structures and the second semiconductor mesa structures of the plurality of second semiconductor mesa structures.

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