公开(公告)号：US08878234B2

公开(公告)日：2014-11-04

申请号：US13781786

申请日：2013-03-01

Applicant: Infineon Technologies AG

Inventor： Harald Gossner ,  Ramgopal Rao ,  Angada Sachid ,  Ashish Pal ,  Ram Asra

IPC: H01L29/66 ,  H01L29/08 ,  H01L29/739 ,  H01L29/165 ,  H01L21/265 ,  H01L29/06

CPC classification number: H01L29/165 ,  H01L21/26586 ,  H01L29/0657 ,  H01L29/083 ,  H01L29/0834 ,  H01L29/66356 ,  H01L29/7391

Abstract: In an embodiment, a semiconductor device is provided. The semiconductor device may include a substrate having a main processing surface, a first source/drain region comprising a first material of a first conductivity type, a second source/drain region comprising a second material of a second conductivity type, wherein the second conductivity type is different from the first conductivity type, a body region electrically coupled between the first source/drain region and the second source/drain region, wherein the body region extends deeper into the substrate than the first source/drain region in a first direction that is perpendicular to the main processing surface of the substrate, a gate dielectric disposed over the body region, and a gate region disposed over the gate dielectric, wherein the gate region overlaps with at least a part of the first source/drain region and with a part of the body region in the first direction.

Abstract translation: 在一个实施例中，提供了半导体器件。 半导体器件可以包括具有主处理表面的衬底，包括第一导电类型的第一材料的第一源极/漏极区域，包括第二导电类型的第二材料的第二源极/漏极区域，其中第二导电类型 不同于第一导电类型，电耦合在第一源极/漏极区域和第二源极/漏极区域之间的主体区域，其中主体区域在第一方向上比第一源极/漏极区域更深地延伸到衬底中 垂直于衬底的主处理表面，设置在主体区域上的栅极电介质和设置在栅极电介质上的栅极区域，其中栅极区域与第一源极/漏极区域的至少一部分重叠， 的身体区域在第一个方向。

公开(公告)号：US20130181256A1

公开(公告)日：2013-07-18

申请号：US13781786

申请日：2013-03-01

Applicant: Infineon Technologies AG

Inventor： Harald Gossner ,  Ramgopal Rao ,  Angada Sachid ,  Ashish Pal ,  Ram Asra

IPC: H01L29/165

CPC classification number: H01L29/165 ,  H01L21/26586 ,  H01L29/0657 ,  H01L29/083 ,  H01L29/0834 ,  H01L29/66356 ,  H01L29/7391

Abstract: In an embodiment, a semiconductor device is provided. The semiconductor device may include a substrate having a main processing surface, a first source/drain region comprising a first material of a first conductivity type, a second source/drain region comprising a second material of a second conductivity type, wherein the second conductivity type is different from the first conductivity type, a body region electrically coupled between the first source/drain region and the second source/drain region, wherein the body region extends deeper into the substrate than the first source/drain region in a first direction that is perpendicular to the main processing surface of the substrate, a gate dielectric disposed over the body region, and a gate region disposed over the gate dielectric, wherein the gate region overlaps with at least a part of the first source/drain region and with a part of the body region in the first direction.

Abstract translation: 在一个实施例中，提供了半导体器件。 半导体器件可以包括具有主处理表面的衬底，包括第一导电类型的第一材料的第一源极/漏极区域，包括第二导电类型的第二材料的第二源极/漏极区域，其中第二导电类型 不同于第一导电类型，电耦合在第一源极/漏极区域和第二源极/漏极区域之间的主体区域，其中主体区域在第一方向上比第一源极/漏极区域在第一方向 垂直于基板的主处理表面，设置在主体区域上的栅极电介质和设置在栅极电介质上的栅极区域，其中栅极区域与第一源极/漏极区域的至少一部分重叠， 的身体区域在第一个方向。