公开(公告)号：US08884352B2

公开(公告)日：2014-11-11

申请号：US13646797

申请日：2012-10-08

Applicant: Infineon Technologies AG

Inventor： Danny Shum ,  Christoph Bukethal ,  Martin Stiftinger ,  John Power

IPC: H01L27/115

CPC classification number: H01L29/66825 ,  H01L27/11521 ,  H01L29/7881

Abstract: A method for manufacturing a memory cell in accordance with various embodiments may include: forming at least one charge storing memory cell structure over a substrate, the charge storing memory cell structure having a first sidewall and a second sidewall opposite the first sidewall; forming an electrically conductive layer over the substrate and the charge storing memory cell structure; patterning the electrically conductive layer to form a spacer at the first sidewall and a blocking structure at the second sidewall of the charge storing memory cell structure; implanting first dopant atoms to form a first doped region in the substrate proximate the spacer, wherein the first dopant atoms are blocked by the blocking structure; removing the blocking structure after implanting the first dopant atoms; implanting second dopant atoms to form a second doped region in the substrate proximate the second sidewall of the charge storing memory cell structure.

Abstract translation: 根据各种实施例的用于制造存储单元的方法可以包括：在衬底上形成至少一个电荷存储存储单元结构，电荷存储存储单元结构具有第一侧壁和与第一侧壁相对的第二侧壁; 在衬底和电荷存储存储单元结构上形成导电层; 图案化所述导电层以在所述第一侧壁处形成间隔物，并在所述电荷存储存储单元结构的第二侧壁处形成阻挡结构; 注入第一掺杂剂原子以在靠近间隔物的衬底中形成第一掺杂区，其中第一掺杂剂原子被阻挡结构阻挡; 在植入第一掺杂剂原子之后去除阻挡结构; 注入第二掺杂剂原子以在靠近电荷存储存储单元结构的第二侧壁的衬底中形成第二掺杂区。

公开(公告)号：US20140097480A1

公开(公告)日：2014-04-10

申请号：US13646797

申请日：2012-10-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Danny Shum ,  Christoph Bukethal ,  Martin Stiftinger ,  John Power

IPC: H01L29/788 ,  H01L21/336

CPC classification number: H01L29/66825 ,  H01L27/11521 ,  H01L29/7881

Abstract: A method for manufacturing a memory cell in accordance with various embodiments may include: forming at least one charge storing memory cell structure over a substrate, the charge storing memory cell structure having a first sidewall and a second sidewall opposite the first sidewall; forming an electrically conductive layer over the substrate and the charge storing memory cell structure; patterning the electrically conductive layer to form a spacer at the first sidewall and a blocking structure at the second sidewall of the charge storing memory cell structure; implanting first dopant atoms to form a first doped region in the substrate proximate the spacer, wherein the first dopant atoms are blocked by the blocking structure; removing the blocking structure after implanting the first dopant atoms; implanting second dopant atoms to form a second doped region in the substrate proximate the second sidewall of the charge storing memory cell structure.

Abstract translation: 根据各种实施例的用于制造存储单元的方法可以包括：在衬底上形成至少一个电荷存储存储单元结构，电荷存储存储单元结构具有第一侧壁和与第一侧壁相对的第二侧壁; 在衬底和电荷存储存储单元结构上形成导电层; 图案化所述导电层以在所述第一侧壁处形成间隔物，并在所述电荷存储存储单元结构的第二侧壁处形成阻挡结构; 注入第一掺杂剂原子以在靠近间隔物的衬底中形成第一掺杂区，其中第一掺杂剂原子被阻挡结构阻挡; 在植入第一掺杂剂原子之后去除阻挡结构; 注入第二掺杂剂原子以在靠近电荷存储存储单元结构的第二侧壁的衬底中形成第二掺杂区。