公开(公告)号：US20140126306A1

公开(公告)日：2014-05-08

申请号：US13668963

申请日：2012-11-05

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Jan Otterstedt ,  David Müller

IPC: G11C7/06

CPC classification number: G11C7/06 ,  G11C16/22 ,  H04L9/0841 ,  H04L9/3263 ,  H04L63/0823

Abstract: An electronic device includes a non-volatile memory having a plurality of memory cells, a memory controller, and an evaluator. The memory controller is configured to provide control signals to the non-volatile memory causing the non-volatile memory, or a selected memory section of the non-volatile memory, to be in one of a read state and a weak erase state, wherein the weak erase state causes the plurality of memory cells to maintain different states depending on different physical properties of the plurality of memory cells. The evaluator is configured to read out the plurality of memory cells and to provide a readout pattern during the read state, wherein the readout pattern that is provided after a preceding weak erase state corresponds to a physically unclonable function (PUF) response of the electronic device uniquely identifying the electronic device.

Abstract translation: 电子设备包括具有多个存储单元的非易失性存储器，存储器控制器和评估器。 存储器控制器被配置为向非易失性存储器提供控制信号，使得非易失性存储器或非易失性存储器的所选存储器部分处于读取状态和弱擦除状态之一，其中， 弱擦除状态导致多个存储单元根据多个存储单元的不同物理特性来维持不同的状态。 评估器被配置为读出多个存储器单元并且在读取状态期间提供读出模式，其中在先前的弱擦除状态之后提供的读出模式对应于电子设备的物理不可克隆功能（PUF）响应 唯一地识别电子设备。

公开(公告)号：US09093128B2

公开(公告)日：2015-07-28

申请号：US13668963

申请日：2012-11-05

Applicant: Infineon Technologies AG

Inventor： Jan Otterstedt ,  David Müller

IPC: G11C7/06 ,  H04L9/32 ,  H04L9/08 ,  G11C16/22 ,  H04L29/06

CPC classification number: G11C7/06 ,  G11C16/22 ,  H04L9/0841 ,  H04L9/3263 ,  H04L63/0823

Abstract: An electronic device includes a non-volatile memory having a plurality of memory cells, a memory controller, and an evaluator. The memory controller is configured to provide control signals to the non-volatile memory causing the non-volatile memory, or a selected memory section of the non-volatile memory, to be in one of a read state and a weak erase state, wherein the weak erase state causes the plurality of memory cells to maintain different states depending on different physical properties of the plurality of memory cells. The evaluator is configured to read out the plurality of memory cells and to provide a readout pattern during the read state, wherein the readout pattern that is provided after a preceding weak erase state corresponds to a physically unclonable function (PUF) response of the electronic device uniquely identifying the electronic device.

Abstract translation: 电子设备包括具有多个存储单元的非易失性存储器，存储器控制器和评估器。 存储器控制器被配置为向非易失性存储器提供控制信号，使得非易失性存储器或非易失性存储器的所选存储器部分处于读取状态和弱擦除状态之一，其中， 弱擦除状态导致多个存储单元根据多个存储单元的不同物理特性来维持不同的状态。 评估器被配置为读出多个存储器单元并且在读取状态期间提供读出模式，其中在先前的弱擦除状态之后提供的读出模式对应于电子设备的物理不可克隆功能（PUF）响应 唯一地识别电子设备。