MULTIPLEXER FOR MEMORY
    1.
    发明申请

    公开(公告)号:US20210174868A1

    公开(公告)日:2021-06-10

    申请号:US17117713

    申请日:2020-12-10

    Abstract: In an example, a multiplexer is provided. The multiplexer may include one or more first strings controlling access to source-lines of the memory, wherein a first string of the one or more first strings includes a first set of two high voltage transistors and a first plurality of low voltage transistors. The multiplexer may include one or more second strings controlling access to bit-lines of the memory, wherein a second string of the one or more second strings includes a second set of two high voltage transistors and a second plurality of low voltage transistors. A method for operating such multiplexer is provided.

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