公开(公告)号：US20210375330A1

公开(公告)日：2021-12-02

申请号：US17399466

申请日：2021-08-11

Applicant: Infineon Technologies AG

Inventor： Gunther Lehmann ,  Prashant Chaudhry ,  Frederic Gueganton ,  Gurushiddappa Naduvinamane ,  Steffen Schumann

IPC: G11C5/14

Abstract: In accordance with an embodiment, a memory cell device includes at least one memory cell; a first switch connected between the at least one memory cell and a reference potential node; a second switch connected between the at least one memory cell and the reference potential node, and switch driver logic adapted to put the first switch selectively into one of at least three operating states by activation or deactivation of a first subcircuit of the switch driver logic, wherein the at least three operating states comprises an on state, an off state, and a conductive state in which an electrical conductivity of the first switch is lower than in the on state and higher than in the off state, and put the second switch selectively into one of the at least three operating states by activation or deactivation of a second subcircuit of the switch driver logic.

公开(公告)号：US11508417B2

公开(公告)日：2022-11-22

申请号：US17399466

申请日：2021-08-11

Applicant: Infineon Technologies AG

Inventor： Gunther Lehmann ,  Prashant Chaudhry ,  Frederic Gueganton ,  Gurushiddappa Naduvinamane ,  Steffen Schumann

IPC: G11C5/14

Abstract: In accordance with an embodiment, a memory cell device includes at least one memory cell; a first switch connected between the at least one memory cell and a reference potential node; a second switch connected between the at least one memory cell and the reference potential node, and switch driver logic adapted to put the first switch selectively into one of at least three operating states by activation or deactivation of a first subcircuit of the switch driver logic, wherein the at least three operating states comprises an on state, an off state, and a conductive state in which an electrical conductivity of the first switch is lower than in the on state and higher than in the off state, and put the second switch selectively into one of the at least three operating states by activation or deactivation of a second subcircuit of the switch driver logic.

公开(公告)号：US11139003B2

公开(公告)日：2021-10-05

申请号：US16711946

申请日：2019-12-12

Applicant: Infineon Technologies AG

Inventor： Gunther Lehmann ,  Prashant Chaudhry ,  Frederic Gueganton ,  Gurushiddappa Naduvinamane ,  Steffen Schumann

IPC: G11C5/14

Abstract: In accordance with an embodiment, a memory cell device includes at least one memory cell; a first switch connected between the at least one memory cell and a reference potential node; a second switch connected between the at least one memory cell and the reference potential node, and switch driver logic adapted to put the first switch selectively into one of at least three operating states by activation or deactivation of a first subcircuit of the switch driver logic, wherein the at least three operating states comprises an on state, an off state, and a conductive state in which an electrical conductivity of the first switch is lower than in the on state and higher than in the off state, and put the second switch selectively into one of the at least three operating states by activation or deactivation of a second subcircuit of the switch driver logic.