公开(公告)号：US20210242677A1

公开(公告)日：2021-08-05

申请号：US16777195

申请日：2020-01-30

Applicant: Infineon Technologies AG

Inventor： Gernot Langguth ,  Adrien Benoit Ille ,  Steffen Schumann

IPC: H02H9/04 ,  H01L27/02 ,  H02H9/00

Abstract: In accordance with an embodiment, a method for electrostatic discharge (ESD) protection includes: dividing a voltage between a plurality of circuit nodes using a voltage divider circuit to form a divided voltage; compensating a temperature dependency of the divided voltage to form a temperature compensated divided voltage; monitoring the voltage between the plurality of circuit nodes using a transient detection circuit to form a transient detection signal; and activating a clamp circuit coupled between the plurality of circuit nodes based on the temperature compensated divided voltage and based on the transient detection signal.

公开(公告)号：US20210375330A1

公开(公告)日：2021-12-02

申请号：US17399466

申请日：2021-08-11

Applicant: Infineon Technologies AG

Inventor： Gunther Lehmann ,  Prashant Chaudhry ,  Frederic Gueganton ,  Gurushiddappa Naduvinamane ,  Steffen Schumann

IPC: G11C5/14

Abstract: In accordance with an embodiment, a memory cell device includes at least one memory cell; a first switch connected between the at least one memory cell and a reference potential node; a second switch connected between the at least one memory cell and the reference potential node, and switch driver logic adapted to put the first switch selectively into one of at least three operating states by activation or deactivation of a first subcircuit of the switch driver logic, wherein the at least three operating states comprises an on state, an off state, and a conductive state in which an electrical conductivity of the first switch is lower than in the on state and higher than in the off state, and put the second switch selectively into one of the at least three operating states by activation or deactivation of a second subcircuit of the switch driver logic.

公开(公告)号：US20250141219A1

公开(公告)日：2025-05-01

申请号：US18931784

申请日：2024-10-30

Applicant: Infineon Technologies AG

Inventor： Mirko Scholz ,  Steffen Schumann ,  Gernot Langguth ,  Adrien Benoit Ille

IPC: H02H9/04

Abstract: In accordance with an embodiment, a device includes: a first supply rail; a second supply rail; an input/output terminal; an electrostatic discharge protection device comprising at least two stacked transistors coupled between the input/output terminal and a first one of the first supply rail or the second supply rail; and a trigger circuit coupled to the first supply rail and the second supply rail and configured to: detect an electrostatic discharge event at the input/output terminal based on a voltage of the first supply rail or a voltage of the second supply rail, and switch on the electrostatic discharge protection device in response to detecting the electrostatic discharge event.

公开(公告)号：US11508417B2

公开(公告)日：2022-11-22

申请号：US17399466

申请日：2021-08-11

Applicant: Infineon Technologies AG

Inventor： Gunther Lehmann ,  Prashant Chaudhry ,  Frederic Gueganton ,  Gurushiddappa Naduvinamane ,  Steffen Schumann

IPC: G11C5/14

Abstract: In accordance with an embodiment, a memory cell device includes at least one memory cell; a first switch connected between the at least one memory cell and a reference potential node; a second switch connected between the at least one memory cell and the reference potential node, and switch driver logic adapted to put the first switch selectively into one of at least three operating states by activation or deactivation of a first subcircuit of the switch driver logic, wherein the at least three operating states comprises an on state, an off state, and a conductive state in which an electrical conductivity of the first switch is lower than in the on state and higher than in the off state, and put the second switch selectively into one of the at least three operating states by activation or deactivation of a second subcircuit of the switch driver logic.

公开(公告)号：US11139003B2

公开(公告)日：2021-10-05

申请号：US16711946

申请日：2019-12-12

Applicant: Infineon Technologies AG

Inventor： Gunther Lehmann ,  Prashant Chaudhry ,  Frederic Gueganton ,  Gurushiddappa Naduvinamane ,  Steffen Schumann

IPC: G11C5/14

Abstract: In accordance with an embodiment, a memory cell device includes at least one memory cell; a first switch connected between the at least one memory cell and a reference potential node; a second switch connected between the at least one memory cell and the reference potential node, and switch driver logic adapted to put the first switch selectively into one of at least three operating states by activation or deactivation of a first subcircuit of the switch driver logic, wherein the at least three operating states comprises an on state, an off state, and a conductive state in which an electrical conductivity of the first switch is lower than in the on state and higher than in the off state, and put the second switch selectively into one of the at least three operating states by activation or deactivation of a second subcircuit of the switch driver logic.

公开(公告)号：US11088542B1

公开(公告)日：2021-08-10

申请号：US16777195

申请日：2020-01-30

Applicant: Infineon Technologies AG

Inventor： Gernot Langguth ,  Adrien Benoit Ille ,  Steffen Schumann

IPC: H02H9/04 ,  H02H9/00 ,  H01L27/02

Abstract: In accordance with an embodiment, a method for electrostatic discharge (ESD) protection includes: dividing a voltage between a plurality of circuit nodes using a voltage divider circuit to form a divided voltage; compensating a temperature dependency of the divided voltage to form a temperature compensated divided voltage; monitoring the voltage between the plurality of circuit nodes using a transient detection circuit to form a transient detection signal; and activating a clamp circuit coupled between the plurality of circuit nodes based on the temperature compensated divided voltage and based on the transient detection signal.