公开(公告)号：US20150309091A1

公开(公告)日：2015-10-29

申请号：US14262727

申请日：2014-04-26

Applicant: Infineon Technologies AG

Inventor： HERBERT KNAPP ,  Jonas Wursthorn

IPC: G01R21/00 ,  G01R1/20

CPC classification number: H04B17/102 ,  G01R19/00 ,  G01R19/0084 ,  G01R19/0092 ,  G01R21/00 ,  G01R21/12

Abstract: The present invention relates to a millimeter-wave transmitter on a chip comprising at least one transmit path coupleable to an oscillator, and an on-chip power sensor to measure at least a portion of a transmit power transmitted over the at least one transmit path. The present invention further relates to a method of calibrating a millimeter-wave transmitter on a chip and an on-chip power sensor coupleable to at least one transmit path of a millimeter-wave transmitter. The embodiments of the present invention provide a direct measure of transmit power provided within an individual one of the transmit paths of the millimeter-wave transmitter.

Abstract translation: 本发明涉及一种芯片上的毫米波发射机，包括至少一个可耦合到振荡器的发射路径，以及片上功率传感器，用于测量在至少一个发射路径上传输的发射功率的至少一部分。 本发明还涉及一种校准芯片上的毫米波发射器的方法和可耦合到毫米波发射器的至少一个发射路径的片上功率传感器。 本发明的实施例提供了在毫米波发射机的发射路径的单独一个内提供的发射功率的直接测量。