OVER THE AIR POWER SENSOR AND METHOD
    1.
    发明申请

    公开(公告)号:US20180006736A1

    公开(公告)日:2018-01-04

    申请号:US15468238

    申请日:2017-03-24

    Abstract: The present invention provides an over the air, OTA, power sensor (1, 20, 50) for measuring power of a wireless signal (2, 21) with at least two different polarizations, the OTA power sensor (1, 20, 50) comprising a first power sensor (3, 4, 22, 23, 51, 52) for every polarization, every power sensor comprising a signal detector (5, 6, 25, 26, 27) for detecting the wireless signal (2, 21), wherein the signal detectors (5, 6, 25, 26, 27) are single polarized and wherein the polarization planes (7, 8, 28-30) of the signal detectors (5, 6, 25, 26, 27) are arranged at an angle of more than zero degree to each other and wherein the main radiation vectors (9, 10, 31-33) of the signal detectors (5, 6, 25, 26, 27) are parallel to each other, and the first power sensors (3, 4, 22, 23, 51, 52) each comprising a power measurement device (11, 12, 43-45), which is configured to measure the power of the detected wireless signal (2, 21) and output a respective measurement signal (13, 14, 46-48, 55-58). Further, the present patent application provides a respective method.

    Power detector
    2.
    发明授权

    公开(公告)号:US09841445B2

    公开(公告)日:2017-12-12

    申请号:US15104704

    申请日:2013-12-16

    Inventor: Mingquan Bao

    CPC classification number: G01R21/10 G01R21/12

    Abstract: A power detector comprising a first and a second bipolar junction/FET transistor. The first transistor is arranged as a common base/gate transistor with its base/gate being biased by a bias voltage and the second transistor is arranged as a common emitter/source transistor with its emitter/source being grounded. The power detector also comprises a diode or current source connected to ground from the emitter/source of the first transistor, in which power detector an input port is connected to the emitter of the first transistor and to the base/gate of the second transistor, and an output port is connected to the collectors/drains of the first and second transistor, said collectors/drains also being connected to a DC supply via a first resistor.

    ON-CHIP MILLIMETER-WAVE POWER DETECTION CIRCUIT
    3.
    发明申请
    ON-CHIP MILLIMETER-WAVE POWER DETECTION CIRCUIT 有权
    片上微波功率检测电路

    公开(公告)号:US20120293163A1

    公开(公告)日:2012-11-22

    申请号:US13232124

    申请日:2011-09-14

    Applicant: Ori Sasson

    Inventor: Ori Sasson

    CPC classification number: G01R21/12 H04B17/102

    Abstract: An on-chip millimeter wave power detection circuit comprises a high resistive probe for voltage sensing of millimeter wave signals, the probe comprises a metal line perpendicularly connected to a transmission line, at one end, and further connected to a power root mean square (RMS) detector at the other end; and the RMS detector for measuring a RMS voltage value of the sensed millimeter wave signals, wherein the RMS detector is characterized by a known impedance.

    Abstract translation: 片上毫米波功率检测电路包括用于毫米波信号的电压感测的高电阻探针,探针包括在一端垂直连接到传输线的金属线,并进一步连接到功率均方根(RMS) )检测器; 以及RMS检测器,用于测量感测的毫米波信号的RMS电压值,其中RMS检测器的特征在于已知的阻抗。

    Integrated power detector with temperature compensation for fully-closed loop control
    4.
    发明授权
    Integrated power detector with temperature compensation for fully-closed loop control 有权
    具有温度补偿功能的集成功率检测器,实现全闭环控制

    公开(公告)号:US07893684B2

    公开(公告)日:2011-02-22

    申请号:US12848937

    申请日:2010-08-02

    CPC classification number: G01R21/12 H03G3/3042 H03G2201/708

    Abstract: An amplifier circuit comprises a detection power input circuit for receiving an RF signal, and a bias circuit that includes an output for generating a bias signal in response to a reference control voltage. The power detector further comprises a detection circuit for generating a power control voltage having a voltage characteristic that offsets temperature characteristics of the received RF signal. The amplifier circuit further comprises a power amplifier coupled to the bias circuit. The power amplifier includes a driver stage providing the RF signal. The detection circuit compensates temperature variation of the inputted detection voltage of the received RF signal.

    Abstract translation: 放大器电路包括用于接收RF信号的检测功率输入电路和包括用于响应于参考控制电压产生偏置信号的输出的偏置电路。 功率检测器还包括用于产生具有抵消接收的RF信号的温度特性的电压特性的功率控制电压的检测电路。 放大器电路还包括耦合到偏置电路的功率放大器。 功率放大器包括提供RF信号的驱动级。 检测电路补偿接收到的RF信号的输入检测电压的温度变化。

    Wave detector circuit
    5.
    发明授权
    Wave detector circuit 有权
    波检测电路

    公开(公告)号:US07705658B2

    公开(公告)日:2010-04-27

    申请号:US11748601

    申请日:2007-05-15

    Abstract: A wave detector circuit includes: a first transistor having its base and collector connected together, the first transistor receiving an AC signal and a reference voltage at its base and collector; a second transistor having its base connected to the base of the first transistor through a resistor, the second transistor outputting a detected voltage at its collector; and a diode-connected temperature compensation transistor connected between ground potential and the base and the collector of the first transistor.

    Abstract translation: 波检测器电路包括:第一晶体管,其基极和集电极连接在一起,第一晶体管在其基极和集电极处接收AC信号和参考电压; 第二晶体管,其基极通过电阻连接到第一晶体管的基极,第二晶体管在其集电极处输出检测电压; 以及连接在地电位与第一晶体管的基极和集电极之间的二极管连接的温度补偿晶体管。

    Super-regenerative microwave detector
    6.
    发明授权
    Super-regenerative microwave detector 有权
    超再生式微波探测器

    公开(公告)号:US07590401B1

    公开(公告)日:2009-09-15

    申请号:US11283243

    申请日:2005-11-17

    Applicant: Gary Frazier

    Inventor: Gary Frazier

    CPC classification number: G01R21/12 B82Y10/00 B82Y30/00 H03B7/08

    Abstract: A resonant tunneling diode or diode array oscillator (10) including a resonant diode (11) is coupled to a millimeter-wave source (14) and a quench generator (16) for periodically quenching the oscillations so that the average oscillation time of the oscillator is proportional to signal strength of the source (14). The signal source can be from an antenna such as a dipole or tapered slot line antenna.

    Abstract translation: 包括谐振二极管(11)的谐振隧道二极管或二极管阵列振荡器(10)耦合到毫米波源(14)和骤冷发生器(16),用于周期性地淬灭振荡,使得振荡器的平均振荡时间 与源(14)的信号强度成比例。 信号源可以来自诸如偶极或锥形槽线天线的天线。

    Embedded Directional Power Sensing
    7.
    发明申请
    Embedded Directional Power Sensing 审中-公开
    嵌入式定向功率检测

    公开(公告)号:US20080224690A1

    公开(公告)日:2008-09-18

    申请号:US12131050

    申请日:2008-05-31

    CPC classification number: G01R21/01 G01R21/12

    Abstract: A module incorporates power sensors coupled to a through line through directional couplers, all of which are mounted on a board within a housing, for measuring transmitted and received power of a system under test.

    Abstract translation: 模块包括通过定向耦合器耦合到通过线路的功率传感器,所有这些都被安装在壳体内的板上,用于测量被测系统的发射和接收功率。

    WAVE DETECTOR CIRCUIT
    9.
    发明申请
    WAVE DETECTOR CIRCUIT 有权
    波检测电路

    公开(公告)号:US20080174356A1

    公开(公告)日:2008-07-24

    申请号:US11748601

    申请日:2007-05-15

    Abstract: A wave detector circuit includes: a first transistor having its base and collector connected together, the first transistor receiving an AC signal and a reference voltage at its base and collector; a second transistor having its base connected to the base of the first transistor through a resistance, the second transistor outputting a detected voltage at its collector; and a diode-connected temperature compensation transistor connected between ground potential and the base and the collector of the first transistor.

    Abstract translation: 波检测器电路包括:第一晶体管,其基极和集电极连接在一起,第一晶体管在其基极和集电极处接收AC信号和参考电压; 第二晶体管,其基极通过电阻连接到第一晶体管的基极,第二晶体管在其集电极处输出检测电压; 以及连接在地电位与第一晶体管的基极和集电极之间的二极管连接的温度补偿晶体管。

Patent Agency Ranking