公开(公告)号：US11581418B2

公开(公告)日：2023-02-14

申请号：US16894223

申请日：2020-06-05

Applicant: Infineon Technologies AG

Inventor： Albert Birner ,  Rudolf Berger ,  Helmut Brech ,  Olaf Storbeck ,  Haifeng Sun ,  John Twynam

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/265 ,  H01L21/268 ,  H01L23/29 ,  H01L23/31 ,  H01L29/10 ,  H01L29/20 ,  H01L29/205 ,  H01L29/417 ,  H01L29/778

Abstract: A semiconductor body having a base carrier portion and a type III-nitride semiconductor portion is provided. The type III-nitride semiconductor portion includes a heterojunction and two-dimensional charge carrier gas. One or more ohmic contacts are formed in the type III-nitride semiconductor portion, the ohmic contacts forming an ohmic connection with the two-dimensional charge carrier gas. A gate structure is configured to control a conductive state of the two-dimensional charge carrier gas. Forming the one or more ohmic contacts comprises forming a structured laser-reflective mask on the upper surface of the type III-nitride semiconductor portion, implanting dopant atoms into the upper surface of the type III-nitride semiconductor portion, and performing a laser thermal anneal that activates the implanted dopant atoms.

公开(公告)号：US12278275B2

公开(公告)日：2025-04-15

申请号：US18093434

申请日：2023-01-05

Applicant: Infineon Technologies AG

Inventor： Albert Birner ,  Rudolf Berger ,  Helmut Brech ,  Olaf Storbeck ,  Haifeng Sun ,  John Twynam

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/265 ,  H01L21/268 ,  H01L23/29 ,  H01L23/31 ,  H01L29/10 ,  H01L29/20 ,  H01L29/205 ,  H01L29/417 ,  H01L29/778

Abstract: A method includes providing a semiconductor body, forming a thermosensitive element on or within the semiconductor body, forming a structured laser-reflective mask on the upper surface of the semiconductor body that covers the thermosensitive element and includes first and second openings, and performing a laser thermal annealing process that transmits laser energy through the first and second openings and into the semiconductor body, wherein the thermosensitive element comprises a critical temperature at which the thermosensitive element is irreparably damaged, wherein the laser thermal annealing process brings portions of the semiconductor body that are underneath the first and second openings to above the critical temperature, and wherein during the laser thermal annealing process the thermosensitive element remains below the critical temperature.

公开(公告)号：US20210384318A1

公开(公告)日：2021-12-09

申请号：US16894223

申请日：2020-06-05

Applicant: Infineon Technologies AG

Inventor： Albert Birner ,  Rudolf Berger ,  Helmut Brech ,  Olaf Storbeck ,  Haifeng Sun ,  John Twynam

IPC: H01L29/66 ,  H01L29/20 ,  H01L29/10 ,  H01L29/417 ,  H01L21/265 ,  H01L29/205 ,  H01L23/29 ,  H01L23/31 ,  H01L21/02 ,  H01L29/778 ,  H01L21/268

Abstract: A semiconductor body having a base carrier portion and a type III-nitride semiconductor portion is provided. The type III-nitride semiconductor portion includes a heterojunction and two-dimensional charge carrier gas. One or more ohmic contacts are formed in the type III-nitride semiconductor portion, the ohmic contacts forming an ohmic connection with the two-dimensional charge carrier gas. A gate structure is configured to control a conductive state of the two-dimensional charge carrier gas. Forming the one or more ohmic contacts comprises forming a structured laser-reflective mask on the upper surface of the type III-nitride semiconductor portion, implanting dopant atoms into the upper surface of the type III-nitride semiconductor portion, and performing a laser thermal anneal that activates the implanted dopant atoms.

公开(公告)号：US20230155000A1

公开(公告)日：2023-05-18

申请号：US18093434

申请日：2023-01-05

Applicant: Infineon Technologies AG

Inventor： Albert Birner ,  Rudolf Berger ,  Helmut Brech ,  Olaf Storbeck ,  Haifeng Sun ,  John Twynam

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/265 ,  H01L21/268 ,  H01L23/29 ,  H01L23/31 ,  H01L29/10 ,  H01L29/20 ,  H01L29/205 ,  H01L29/417 ,  H01L29/778

CPC classification number: H01L29/66462 ,  H01L21/0217 ,  H01L21/268 ,  H01L21/26546 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/205 ,  H01L29/1033 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/41725

Abstract: A method includes providing a semiconductor body, forming a thermosensitive element on or within the semiconductor body, forming a structured laser-reflective mask on the upper surface of the semiconductor body that covers the thermosensitive element and includes first and second openings, and performing a laser thermal annealing process that transmits laser energy through the first and second openings and into the semiconductor body, wherein the thermosensitive element comprises a critical temperature at which the thermosensitive element is irreparably damaged, wherein the laser thermal annealing process brings portions of the semiconductor body that are underneath the first and second openings to above the critical temperature, and wherein during the laser thermal annealing process the thermosensitive element remains below the critical temperature.