公开(公告)号：US10967450B2

公开(公告)日：2021-04-06

申请号：US15971830

申请日：2018-05-04

Applicant: Infineon Technologies AG

Inventor： Nirdesh Ojha ,  Francisco Javier Santos Rodriguez ,  Roland Rupp ,  Markus Heinrici ,  Karin Delalut ,  Claudia Friza

IPC: B23H7/06 ,  B23H7/10 ,  B23H7/14 ,  B23H7/30 ,  B23H7/34 ,  B23H1/02

Abstract: A method of yielding a thinner product wafer from a thicker base SiC wafer cut from a SiC ingot includes: supporting the base SiC wafer with a support substrate: and while the base SiC wafer is supported by the support substrate, cutting through the base SiC wafer in a direction parallel to a first main surface of the base SiC wafer using a wire as part of a wire electrical discharge machining (WEDM) process, to separate the product wafer from the base SiC wafer, the product wafer being attached to the support substrate when cut from the base SiC wafer.

公开(公告)号：US20190337069A1

公开(公告)日：2019-11-07

申请号：US15971830

申请日：2018-05-04

Applicant: Infineon Technologies AG

Inventor： Nirdesh Ojha ,  Francisco Javier Santos Rodriguez ,  Roland Rupp ,  Markus Heinrici ,  Karin Delalut ,  Claudia Friza

IPC: B23H7/06 ,  B23H7/10 ,  B23H7/14 ,  B23H7/30 ,  B23H7/34 ,  B23H1/02

Abstract: A method of yielding a thinner product wafer from a thicker base SiC wafer cut from a SiC ingot includes: supporting the base SiC wafer with a support substrate: and while the base SiC wafer is supported by the support substrate, cutting through the base SiC wafer in a direction parallel to a first main surface of the base SiC wafer using a wire as part of a wire electrical discharge machining (WEDM) process, to separate the product wafer from the base SiC wafer, the product wafer being attached to the support substrate when cut from the base SiC wafer.