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公开(公告)号:US12170226B2
公开(公告)日:2024-12-17
申请号:US18620327
申请日:2024-03-28
Applicant: Infineon Technologies AG
Inventor: Franz-Josef Pichler , Benjamin Bernard , Mario Stefenelli
IPC: H01L21/82 , H01L21/02 , H01L21/268 , H01L21/304 , H01L21/324 , H01L21/683 , H01L29/16
Abstract: A method for separating dies from a semiconductor substrate having dies adjoining a first surface of the substrate includes: attaching the substrate to a carrier via the first surface; generating first modifications by introducing laser irradiation into an interior of the substrate via a second surface of the substrate, the first modifications extending between the first surface and a vertical level in the interior that is being spaced from the second surface, the first modifications laterally surrounding the dies; generating second modifications by introducing laser irradiation into the interior via the second surface, the second modifications sub-dividing the substrate into a first part between the first surface and the second modifications, and a second part between the second surface and the second modifications; separating the parts along a first separation area defined by the second modifications; and separating the dies along a second separation area defined by the first modifications.
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公开(公告)号:US20240339361A1
公开(公告)日:2024-10-10
申请号:US18620327
申请日:2024-03-28
Applicant: Infineon Technologies AG
Inventor: Franz-Josef Pichler , Benjamin Bernard , Mario Stefenelli
IPC: H01L21/82 , H01L21/02 , H01L21/268 , H01L21/304 , H01L21/324 , H01L21/683 , H01L29/16
CPC classification number: H01L21/8213 , H01L21/02118 , H01L21/268 , H01L21/304 , H01L21/324 , H01L21/6836 , H01L29/1608 , H01L2221/68309 , H01L2221/68327 , H01L2221/68381
Abstract: A method for separating dies from a semiconductor substrate having dies adjoining a first surface of the substrate includes: attaching the substrate to a carrier via the first surface; generating first modifications by introducing laser irradiation into an interior of the substrate via a second surface of the substrate, the first modifications extending between the first surface and a vertical level in the interior that is being spaced from the second surface, the first modifications laterally surrounding the dies; generating second modifications by introducing laser irradiation into the interior via the second surface, the second modifications sub-dividing the substrate into a first part between the first surface and the second modifications, and a second part between the second surface and the second modifications; separating the parts along a first separation area defined by the second modifications; and separating the dies along a second separation area defined by the first modifications.
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