公开(公告)号：US20240413046A1

公开(公告)日：2024-12-12

申请号：US18732818

申请日：2024-06-04

Applicant: Infineon Technologies AG

Inventor： Frank Sauerland ,  Roland Speckels ,  Markus Fink

IPC: H01L23/373 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31

Abstract: A semiconductor module includes: a power electronic substrate having a first conductive layer, a second conductive layer, and an insulating layer separating the first and second conductive layers; at least one semiconductor die arranged over the first conductive layer; and a molded body having a first side and an opposite second side. The molded body encapsulates the semiconductor die and partially encapsulates the power electronic substrate such that the second conductive layer is at least partially exposed from the second side of the molded body. The insulating layer protrudes beyond a contour of the first conductive layer and/or beyond a contour of the second conductive layer at lateral sides of the power electronic substrate by a nonzero protrusion. A ratio of a thickness of the insulating layer to a length of the protrusion is 0.8 or more.