公开(公告)号：US20230317745A1

公开(公告)日：2023-10-05

申请号：US18193908

申请日：2023-03-31

Applicant: Infineon Technologies AG

Inventor： Tobias MONO ,  Dirk VIETZKE

IPC: H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/14629 ,  G01S17/08

Abstract: An optical sensor includes a pixel that includes: a photoactive region configured to convert photons into electrons and holes, first and second modulation gates configured to be modulated for indirect time of flight measurement, the first and second modulation gates being arranged on a front side of the pixel, first and second trenches arranged on opposite lateral sides of the photoactive region, and a first memory part arranged laterally next to the first trench and at least partially separated from the photoactive region by the first trench and a second memory part arranged laterally next to the second trench and at least partially separated from the photoactive region by the second trench, the first and second memory parts being configured to bin electrons generated in the photoactive region, and the first and second trenches are configured as reflective structures for photons in the photoactive region.

公开(公告)号：US20240128295A1

公开(公告)日：2024-04-18

申请号：US18480704

申请日：2023-10-04

Applicant: Infineon Technologies AG

Inventor： Dirk VIETZKE ,  Tobias MONO

IPC: H01L27/146 ,  G01S7/481

CPC classification number: H01L27/1463 ,  G01S7/4816 ,  H01L27/14649 ,  H01L27/14689

Abstract: An optical sensor includes a pixel including a photoactive region configured to convert photons into charge carriers, a first and a second modulation gate configured to be modulated for indirect time of flight measurement, a first and a second storage node arranged on opposite sides of the photoactive region, the first and second storage nodes being configured to pin electrons generated in the photoactive region when the first or the second modulation gate is active, respectively, and a first field plate arranged next to the first storage node and a second field plate arranged next to the second storage node. The first and second field plates are configured to be supplied with a negative bias voltage such that the first and second field plates provide electrical isolation for the first or the second storage node, respectively.

公开(公告)号：US20230124062A1

公开(公告)日：2023-04-20

申请号：US18046286

申请日：2022-10-13

Applicant: Infineon Technologies AG

Inventor： Stefano PARASCANDOLA ,  Dirk OFFENBERG ,  Tobias MONO

IPC: H01L27/146 ,  H01L31/0392 ,  H01L31/18 ,  G01S7/481

Abstract: A heteroepitaxial semiconductor device includes a seed layer including a first semiconductor material, the seed layer including a first side, an opposing second side and lateral sides connecting the first and second sides, a separation layer arranged at the first side of the seed layer, the separation layer including an aperture, a heteroepitaxial structure grown at the first side of the seed layer at least in the aperture and including a second semiconductor material, different from the first semiconductor material, and a first dielectric material layer arranged at the second side of the seed layer and covering the lateral sides of the seed layer.

公开(公告)号：US20230115183A1

公开(公告)日：2023-04-13

申请号：US17938840

申请日：2022-10-07

Applicant: Infineon Technologies AG

Inventor： Dirk VIETZKE ,  Tobias MONO ,  Stefano PARASCANDOLA ,  Dirk OFFENBERG ,  Alfred SIGL

IPC: H01L27/146

Abstract: An image sensor device includes a pixel. The pixel includes a semiconductor layer having a first surface. A photodiode is formed in the semiconductor layer and is configured to generate charge carriers based on light reaching the photodiode. A storage node is formed in the semiconductor layer, the storage node being arranged so that charge carriers generated in the photodiode are transferred to the storage node. A light-shielding structure is formed in the semiconductor layer and is disposed at least between the first surface of the semiconductor layer and the storage node so as to prevent at least part of the light travelling in the semiconductor layer away from the first surface from reaching the storage node.