公开(公告)号：US20180108692A1

公开(公告)日：2018-04-19

申请号：US15783071

申请日：2017-10-13

Applicant: Infineon Technologies AG ,  pmdtechnologies ag

Inventor： Robert ROESSLER ,  Henning FEICK ,  Matthias FRANKE ,  Dirk OFFENBERG ,  Stefano PARASCANDOLA ,  Jens PRIMA

IPC: H01L27/146 ,  G01S17/08 ,  H01L23/48 ,  H01L31/0232 ,  H01L31/101 ,  H01L31/02

CPC classification number: H01L27/14609 ,  G01S7/4914 ,  G01S17/08 ,  G01S17/36 ,  H01L23/481 ,  H01L27/14636 ,  H01L31/02024 ,  H01L31/02325 ,  H01L31/101

Abstract: An optical sensor device includes a semiconductor substrate comprising a conversion region to convert an electromagnetic signal into photo-generated charge carriers, a read-out node configured to read-out a first portion of the photo-generated charge carriers, a control electrode, which is formed in a trench extending into the semiconductor substrate, and a doping region in the semiconductor substrate, wherein the doping region is adjacent to the trench, and wherein the doping region has a doping type different from the read out node, wherein the doping region has a doping concentration so that the doping region remains depleted during operation.

公开(公告)号：US20140145281A1

公开(公告)日：2014-05-29

申请号：US14093172

申请日：2013-11-29

Applicant: Infineon Technologies AG

Inventor： Thomas BEVER ,  Henning FEICK ,  Dirk OFFENBERG ,  Stefano PARASCANDOLA ,  Ines UHLIG ,  Thoralf KAUTZSCH ,  Dirk MEINHOLD ,  Hanno MELZNER

IPC: H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/035272 ,  G01S7/4914 ,  H01L27/14806

Abstract: Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region

Abstract translation: 描述和描绘与光电荷载体的控制相关的实施例。 至少一个实施例提供了包括光转换区域以将光转换成光生电荷载流子的半导体衬底; 用于积累光生电荷载流子的区域; 控制电极结构，其包括多个控制电极，以产生电位分布，使得所述光生载流子基于施加到所述控制电极结构的信号而被引导到所述区域以累积所述光生电荷载流子; 在半导体衬底中的不均匀掺杂分布，以在光转换区域的至少一部分中产生具有垂直场矢量分量的电场

公开(公告)号：US20240136380A1

公开(公告)日：2024-04-25

申请号：US18491920

申请日：2023-10-22

Applicant: Infineon Technologies AG

Inventor： Stefano PARASCANDOLA ,  Dirk OFFENBERG

IPC: H01L27/146

CPC classification number: H01L27/14627 ,  H01L27/14629 ,  H01L27/14632 ,  H01L27/14685

Abstract: An active pixel sensor includes at least one pixel, including: a photoactive area, and at least one polysilicon component arranged over the photoactive area such that a photon may pass the polysilicon component prior to entering the photoactive area, wherein the polysilicon component includes a diffraction structure configured to diffract incoming photons and thereby extend the light path of the incoming photons within the photoactive area.

公开(公告)号：US20140077066A1

公开(公告)日：2014-03-20

申请号：US14033317

申请日：2013-09-20

Applicant: Infineon Technologies AG

Inventor： Dirk OFFENBERG ,  Henning FEICK ,  Stefano PARASCANDOLA

IPC: H01L27/146

CPC classification number: H01L27/14856 ,  G01S7/4865 ,  G01S7/4914 ,  H01L27/14601 ,  H01L27/14683 ,  H04N5/369

Abstract: Embodiments related to the manufacturing of an imager device and an imager device are disclosed. Embodiments associated with methods of an imager device are also disclosed.

Abstract translation: 公开了与成像装置和成像装置的制造有关的实施例。 还公开了与成像器装置的方法相关联的实施例。

公开(公告)号：US20230124062A1

公开(公告)日：2023-04-20

申请号：US18046286

申请日：2022-10-13

Applicant: Infineon Technologies AG

Inventor： Stefano PARASCANDOLA ,  Dirk OFFENBERG ,  Tobias MONO

IPC: H01L27/146 ,  H01L31/0392 ,  H01L31/18 ,  G01S7/481

Abstract: A heteroepitaxial semiconductor device includes a seed layer including a first semiconductor material, the seed layer including a first side, an opposing second side and lateral sides connecting the first and second sides, a separation layer arranged at the first side of the seed layer, the separation layer including an aperture, a heteroepitaxial structure grown at the first side of the seed layer at least in the aperture and including a second semiconductor material, different from the first semiconductor material, and a first dielectric material layer arranged at the second side of the seed layer and covering the lateral sides of the seed layer.

公开(公告)号：US20230115183A1

公开(公告)日：2023-04-13

申请号：US17938840

申请日：2022-10-07

Applicant: Infineon Technologies AG

Inventor： Dirk VIETZKE ,  Tobias MONO ,  Stefano PARASCANDOLA ,  Dirk OFFENBERG ,  Alfred SIGL

IPC: H01L27/146

Abstract: An image sensor device includes a pixel. The pixel includes a semiconductor layer having a first surface. A photodiode is formed in the semiconductor layer and is configured to generate charge carriers based on light reaching the photodiode. A storage node is formed in the semiconductor layer, the storage node being arranged so that charge carriers generated in the photodiode are transferred to the storage node. A light-shielding structure is formed in the semiconductor layer and is disposed at least between the first surface of the semiconductor layer and the storage node so as to prevent at least part of the light travelling in the semiconductor layer away from the first surface from reaching the storage node.

公开(公告)号：US20200158841A1

公开(公告)日：2020-05-21

申请号：US16747084

申请日：2020-01-20

Applicant: Infineon Technologies AG ,  pmdtechnologies ag

Inventor： Stefano PARASCANDOLA ,  Henning FEICK ,  Matthias FRANKE ,  Dirk OFFENBERG ,  Jens PRIMA ,  Robert ROESSLER ,  Michael SOMMER

IPC: G01S7/4914 ,  H04N13/257 ,  G01S17/36 ,  H01L27/146 ,  G01S7/4915

Abstract: An optical sensor device configured to detect a time of flight of an electromagnetic signal includes a semiconductor substrate having a main surface and a conversion region configured to convert at least a fraction of the electromagnetic signal into photo-generated charge carriers; a first control electrode formed in a trench extending from the main surface into the semiconductor substrate; a second control electrode disposed directly or indirectly on the main surface; a control circuit configured to apply a varying first potential to the first control electrode and to apply a varying second potential to the second control electrode, where the varying second potential has a fixed phase relationship to the first varying potential, to generate electric potential distributions in the conversion region to direct the photo-generated charge carriers; and a readout node arranged in the semiconductor substrate and configured to detect the directed photo-generated charge carriers.

公开(公告)号：US20240234463A9

公开(公告)日：2024-07-11

申请号：US18491920

申请日：2023-10-23

Applicant: Infineon Technologies AG

Inventor： Stefano PARASCANDOLA ,  Dirk OFFENBERG

IPC: H01L27/146

CPC classification number: H01L27/14627 ,  H01L27/14629 ,  H01L27/14632 ,  H01L27/14685

Abstract: An active pixel sensor includes at least one pixel, including: a photoactive area, and at least one polysilicon component arranged over the photoactive area such that a photon may pass the polysilicon component prior to entering the photoactive area, wherein the polysilicon component includes a diffraction structure configured to diffract incoming photons and thereby extend the light path of the incoming photons within the photoactive area.

公开(公告)号：US20230123410A1

公开(公告)日：2023-04-20

申请号：US18046289

申请日：2022-10-13

Applicant: Infineon Technologies AG

Inventor： Stefano PARASCANDOLA ,  Dirk OFFENBERG ,  Boris BINDER

IPC: H01L27/146 ,  H01L31/102 ,  H01L31/18

Abstract: A heteroepitaxial semiconductor device includes a bulk semiconductor substrate, a seed layer including a first semiconductor material, the seed layer being arranged at a first side of the bulk semiconductor substrate and including a first side facing the bulk semiconductor substrate, an opposing second side and lateral sides connecting the first and second sides, a separation layer arranged between the bulk semiconductor substrate and the seed layer, a heteroepitaxial structure grown on the second side of the seed layer and including a second semiconductor material, different from the first semiconductor material, and a dielectric material layer arranged on the seed layer and at least partially encapsulating the heteroepitaxial structure, wherein the dielectric material layer also covers the lateral sides of the seed layer.

公开(公告)号：US20180106892A1

公开(公告)日：2018-04-19

申请号：US15783062

申请日：2017-10-13

Applicant: Infineon Technologies AG ,  pmdtechnologies ag

Inventor： Stefano PARASCANDOLA ,  Henning FEICK ,  Matthias FRANKE ,  Dirk OFFENBERG ,  Jens PRIMA ,  Robert ROESSLER ,  Michael SOMMER

IPC: G01S7/491 ,  G01S17/36 ,  H01L27/146 ,  H04N13/02

CPC classification number: G01S7/4914 ,  G01S7/4915 ,  G01S17/36 ,  H01L27/14603 ,  H04N13/257

Abstract: An optical sensor device configured to detect a time of flight of an electromagnetic signal includes a semiconductor substrate with a conversion region configured to convert at least a portion of the electromagnetic signal into photo-generated charge carriers. A deep control electrode is formed in a trench extending into the semiconductor substrate. The deep control electrode extends deeper into the semiconductor substrate than a shallow control electrode. A control circuit is configured to apply to the deep control electrode and to the shallow control electrode varying potentials having a fixed phase relationship to each other, to generate electric potential distributions in the conversion region, by which the photo-generated charge carriers in the conversion region are directed. The directed photo-generated charge carriers are detected at at least one readout node.