公开(公告)号：US20250105102A1

公开(公告)日：2025-03-27

申请号：US18823912

申请日：2024-09-04

Applicant: Infineon Technologies AG

Inventor： Roman Künstler-Boschke ,  Wen-Mei Lin ,  Stefan Beyer ,  Subaramaniym Senivasan

IPC: H01L23/495 ,  H01L23/00

Abstract: A power semiconductor device includes: a die carrier; a power semiconductor die arranged on the die carrier and having a first side and an opposite second side, the first side facing away from the die carrier and including a first power terminal having a Cu layer and the second side including a second power terminal electrically coupled to the die carrier; a contact clip electrically coupled to the Cu layer of the first power terminal by a solder joint; and a patterned cover layer deposited on the first side of the power semiconductor die. The cover layer surrounds the first power terminal on at least one lateral side. The cover layer is arranged over the Cu layer. The cover layer consists of Al2O3 or SiO2.