公开(公告)号：US20220406930A1

公开(公告)日：2022-12-22

申请号：US17352954

申请日：2021-06-21

申请人： Infineon Technologies Austria AG

发明人： Anita Brazzale ,  Robert Haase ,  Sylvain Leomant ,  Harsh Naik

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/40 ,  H01L29/66 ,  H01L29/45 ,  H01L29/49

摘要： A semiconductor device is described. The semiconductor device includes: a Si substrate having a first main surface; a plurality of gate trenches extending from the first main surface into the Si substrate; a semiconductor mesa between adjacent gate trenches; a first interlayer dielectric on the first main surface; a plurality of first metal contacts extending through the first interlayer dielectric and contacting gate electrodes disposed in the gate trenches; a plurality of second metal contacts extending through the first interlayer dielectric and contacting the semiconductor mesas; and an air gap or a dielectric material having a lower dielectric constant than the first interlayer dielectric between adjacent first and second metal contacts. Methods of producing the semiconductor device are also described.

公开(公告)号：US11777026B2

公开(公告)日：2023-10-03

申请号：US17352954

申请日：2021-06-21

申请人： Infineon Technologies Austria AG

发明人： Anita Brazzale ,  Robert Haase ,  Sylvain Leomant ,  Harsh Naik

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/40 ,  H01L29/45 ,  H01L29/49 ,  H01L29/66

CPC分类号： H01L29/7813 ,  H01L29/0696 ,  H01L29/404 ,  H01L29/45 ,  H01L29/495 ,  H01L29/4916 ,  H01L29/66734

摘要： A semiconductor device is described. The semiconductor device includes: a Si substrate having a first main surface; a plurality of gate trenches extending from the first main surface into the Si substrate; a semiconductor mesa between adjacent gate trenches; a first interlayer dielectric on the first main surface; a plurality of first metal contacts extending through the first interlayer dielectric and contacting gate electrodes disposed in the gate trenches; a plurality of second metal contacts extending through the first interlayer dielectric and contacting the semiconductor mesas; and an air gap or a dielectric material having a lower dielectric constant than the first interlayer dielectric between adjacent first and second metal contacts. Methods of producing the semiconductor device are also described.

公开(公告)号：US20230395711A1

公开(公告)日：2023-12-07

申请号：US18453717

申请日：2023-08-22

申请人： Infineon Technologies Austria AG

发明人： Anita Brazzale ,  Robert Haase ,  Sylvain Leomant ,  Harsh Naik

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/40 ,  H01L29/45 ,  H01L29/49 ,  H01L29/66

CPC分类号： H01L29/7813 ,  H01L29/0696 ,  H01L29/404 ,  H01L29/45 ,  H01L29/4916 ,  H01L29/495 ,  H01L29/66734

摘要： A semiconductor device is described. The semiconductor device includes: a semiconductor substrate having a first main surface; a plurality of gate trenches extending from the first main surface into the semiconductor substrate; a semiconductor mesa between adjacent gate trenches; a first interlayer dielectric on the first main surface; a plurality of first metal contacts extending through the first interlayer dielectric and contacting gate electrodes disposed in the gate trenches; a plurality of second metal contacts extending through the first interlayer dielectric and contacting the semiconductor mesas; and an air gap or a dielectric material having a lower dielectric constant than the first interlayer dielectric between adjacent first and second metal contacts. Methods of producing the semiconductor device are also described.