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公开(公告)号：US11031479B2
公开(公告)日：2021-06-08
申请号：US16535731
申请日：2019-08-08
发明人： Britta Wutte , Sylvain Leomant
IPC分类号： H01L29/423 , H01L29/66 , H01L29/40 , H01L29/78 , H01L29/06
摘要： A transistor device includes a first trench and a second trench arranged in a comb-like structure, first sections of the first and second trenches corresponding to teeth of the comb-like structure and second sections of the first and second trenches corresponding to opposing shafts of the comb-like structure. The arrangement of the first trench and the second trench forms a pattern of interdigitated fingers. Transistor cells of the transistor device are disposed between single fingers of the first and second trenches. A semiconductor mesa separates the first trench and the second trench from each other. A gate electrode in the first trench or a gate electrode in the second trench is electrically connected to a source potential instead of a gate potential to decrease a gate charge of the transistor device.
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公开(公告)号：US11031466B2
公开(公告)日：2021-06-08
申请号：US16896593
申请日：2020-06-09
发明人： Martin Poelzl , Robert Haase , Maximilian Roesch , Sylvain Leomant , Andreas Meiser , Bernhard Goller , Ravi Keshav Joshi
IPC分类号： H01L29/06 , H01L21/02 , H01L21/225 , H01L27/06 , H01L29/10 , H01L29/40 , H01L29/417 , H01L29/66 , H01L29/78 , H01L29/739
摘要： A method of manufacturing a semiconductor device includes: forming one or more device epitaxial layers over a main surface of a doped Si base substrate; forming a diffusion barrier structure including alternating layers of Si and oxygen-doped Si in an upper part of the doped Si base substrate adjacent the main surface of the doped Si base substrate, in a lower part of the one or more device epitaxial layers adjacent the main surface of the doped Si base substrate, or in one or more additional epitaxial layers disposed between the main surface of the doped Si base substrate and the one or more device epitaxial layers; and forming a gate above the diffusion barrier structure.
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公开(公告)号：US10861966B2
公开(公告)日：2020-12-08
申请号：US16719070
申请日：2019-12-18
发明人： Thomas Feil , Robert Haase , Martin Poelzl , Maximilian Roesch , Sylvain Leomant , Bernhard Goller , Ravi Keshav Joshi
IPC分类号： H01L29/78 , H01L21/28 , H01L29/08 , H01L29/10 , H01L29/40 , H01L29/423 , H01L29/51 , H01L29/66
摘要： A semiconductor device includes: a gate trench extending into a Si substrate; a body region in the Si substrate adjacent the gate trench; a source region in the Si substrate above the body region; a diffusion barrier structure adjacent a sidewall of the gate trench, the diffusion barrier structure including alternating layers of Si and oxygen-doped Si and a Si capping layer on the alternating layers of Si and oxygen-doped Si; and a channel region formed in the Si capping layer and which vertically extends along the sidewall of the gate trench. Corresponding methods of manufacture are also described.
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公开(公告)号：US20200052110A1
公开(公告)日：2020-02-13
申请号：US16058655
申请日：2018-08-08
发明人： Thomas Feil , Robert Haase , Martin Poelzl , Maximilian Roesch , Sylvain Leomant , Bernhard Goller , Ravi Keshav Joshi
IPC分类号： H01L29/78 , H01L29/08 , H01L29/10 , H01L29/66 , H01L29/51 , H01L21/28 , H01L29/40 , H01L29/423
摘要： A semiconductor device includes a gate trench extending into a Si substrate, a body region in the Si substrate adjacent the gate trench, a source region in the Si substrate above the body region, a contact trench extending into the Si substrate and filled with an electrically conductive material which contacts the source region at a sidewall of the contact trench and a highly doped body contact region at a bottom of the contact trench, a diffusion barrier structure formed along the sidewall of the gate trench, the diffusion barrier structure comprising alternating layers of Si and oxygen-doped Si and a Si capping layer on the alternating layers of Si and oxygen-doped Si, and a channel region formed in the Si capping layer and which vertically extends along the sidewall of the gate trench. Corresponding methods of manufacture are also described.
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公开(公告)号：US10418452B2
公开(公告)日：2019-09-17
申请号：US15948651
申请日：2018-04-09
发明人： Britta Wutte , Sylvain Leomant
IPC分类号： H01L29/74 , H01L31/111 , H01L29/423 , H01L29/66 , H01L29/40 , H01L29/78
摘要： A semiconductor device includes a first trench and a second trench in a first main surface of a semiconductor substrate. Each of the first and second trenches includes first sections extending lengthwise in a first direction and a second section extending lengthwise in a second direction transvers to the first direction, the second section of the first trench being disposed opposite to the second section of the second trench. The semiconductor device further includes a semiconductor mesa separating the first and second trenches, and a source metal layer above the first main surface of the semiconductor substrate and electrically connected to source regions in the semiconductor mesa. Corresponding methods of manufacture are also described.
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公开(公告)号：US20230395711A1
公开(公告)日：2023-12-07
申请号：US18453717
申请日：2023-08-22
发明人： Anita Brazzale , Robert Haase , Sylvain Leomant , Harsh Naik
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/404 , H01L29/45 , H01L29/4916 , H01L29/495 , H01L29/66734
摘要： A semiconductor device is described. The semiconductor device includes: a semiconductor substrate having a first main surface; a plurality of gate trenches extending from the first main surface into the semiconductor substrate; a semiconductor mesa between adjacent gate trenches; a first interlayer dielectric on the first main surface; a plurality of first metal contacts extending through the first interlayer dielectric and contacting gate electrodes disposed in the gate trenches; a plurality of second metal contacts extending through the first interlayer dielectric and contacting the semiconductor mesas; and an air gap or a dielectric material having a lower dielectric constant than the first interlayer dielectric between adjacent first and second metal contacts. Methods of producing the semiconductor device are also described.
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公开(公告)号：US20210183948A1
公开(公告)日：2021-06-17
申请号：US17117576
申请日：2020-12-10
IPC分类号： H01L27/24 , H01L29/40 , H01L29/66 , H01L21/768
摘要： The application relates to a semiconductor switch element, including: a first vertical transistor device formed in a substrate and having a source region formed on a first side of the substrate and a drain region formed on a second side of the substrate vertically opposite to the first side; a second vertical transistor device formed laterally aside the first vertical transistor device in the same substrate and having a source region formed on the first side of the substrate and a drain region formed on the second side of the substrate; a conductive element arranged on the second side of the substrate and electrically connecting the drain regions of the vertical transistor devices; and a trench extending vertically into the substrate at the second side of the substrate, wherein at least a part of the conductive element is arranged in the trench.
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公开(公告)号：US20200303498A1
公开(公告)日：2020-09-24
申请号：US16896593
申请日：2020-06-09
发明人： Martin Poelzl , Robert Haase , Maximilian Roesch , Sylvain Leomant , Andreas Meiser , Bernhard Goller , Ravi Keshav Joshi
IPC分类号： H01L29/06 , H01L21/02 , H01L21/225 , H01L27/06 , H01L29/10 , H01L29/40 , H01L29/417 , H01L29/66 , H01L29/78
摘要： A method of manufacturing a semiconductor device includes: forming one or more device epitaxial layers over a main surface of a doped Si base substrate; forming a diffusion barrier structure including alternating layers of Si and oxygen-doped Si in an upper part of the doped Si base substrate adjacent the main surface of the doped Si base substrate, in a lower part of the one or more device epitaxial layers adjacent the main surface of the doped Si base substrate, or in one or more additional epitaxial layers disposed between the main surface of the doped Si base substrate and the one or more device epitaxial layers; and forming a gate above the diffusion barrier structure.
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9.发明授权公开(公告)号：US10580888B1
公开(公告)日：2020-03-03
申请号：US16058631
申请日：2018-08-08
发明人： Oliver Blank , Thomas Feil , Maximilian Roesch , Martin Poelzl , Robert Haase , Sylvain Leomant , Bernhard Goller , Andreas Meiser
IPC分类号： H01L29/78 , H01L21/76 , H01L29/08 , H01L29/10 , H01L29/66 , H01L21/02 , H01L21/768 , H01L21/3063
摘要： A semiconductor device includes a gate trench extending into a Si substrate, a body region in the Si substrate, the body region including a channel region which extends along a sidewall of the gate trench, a source region in the Si substrate above the body region, a contact trench extending into the Si substrate and separated from the gate trench by a portion of the source region and a portion of the body region, the contact trench being filled with an electrically conductive material which contacts the source region at a sidewall of the contact trench and a highly doped body contact region at a bottom of the contact trench, and a diffusion barrier structure formed along the sidewall of the contact trench and disposed between the highly doped body contact region and the channel region, the diffusion barrier structure including alternating layers of Si and oxygen-doped Si.
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公开(公告)号：US20180226481A1
公开(公告)日：2018-08-09
申请号：US15948651
申请日：2018-04-09
发明人： Britta Wutte , Sylvain Leomant
IPC分类号： H01L29/423 , H01L29/78 , H01L29/40 , H01L29/66
CPC分类号： H01L29/4236 , H01L29/0696 , H01L29/407 , H01L29/4238 , H01L29/66734 , H01L29/7813
摘要： A semiconductor device includes a first trench and a second trench in a first main surface of a semiconductor substrate. Each of the first and second trenches includes first sections extending lengthwise in a first direction and a second section extending lengthwise in a second direction transvers to the first direction, the second section of the first trench being disposed opposite to the second section of the second trench. The semiconductor device further includes a semiconductor mesa separating the first and second trenches, and a source metal layer above the first main surface of the semiconductor substrate and electrically connected to source regions in the semiconductor mesa. Corresponding methods of manufacture are also described.
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