公开(公告)号：US20220231125A1

公开(公告)日：2022-07-21

申请号：US17716555

申请日：2022-04-08

申请人： Infineon Technologies Dresden GmbH & Co. KG

发明人： Hans-Juergen Thees ,  Stefan Loesch ,  Marc Probst ,  Tom Richter ,  Olaf Storbeck

IPC分类号： H01L29/06 ,  H01L29/739 ,  H01L29/66

摘要： A power semiconductor device includes a control cell for controlling a load current and electrically connected to a load terminal structure on one side and to a drift region on another side. The drift region includes dopants of a first conductivity type. The control cell includes: a mesa extending along a vertical direction and including a contact region having dopants of the first or second conductivity type and electrically connected to the load terminal structure, and a channel region coupled to the drift region; a control electrode configured to control a conduction channel in the channel region; and a contact plug including at least one of a doped semiconductive material or metal, and arranged in contact with the contact region. An electrical connection between the contact region and load terminal structure is established by the contact plug, a portion of which horizontally projects beyond lateral boundaries of the mesa.

公开(公告)号：US12087816B2

公开(公告)日：2024-09-10

申请号：US17716555

申请日：2022-04-08

申请人： Infineon Technologies Dresden GmbH & Co. KG

发明人： Hans-Juergen Thees ,  Stefan Loesch ,  Marc Probst ,  Tom Richter ,  Olaf Storbeck

IPC分类号： H01L29/06 ,  H01L29/66 ,  H01L29/739

CPC分类号： H01L29/0696 ,  H01L29/66333 ,  H01L29/7395

摘要： A power semiconductor device includes a control cell for controlling a load current and electrically connected to a load terminal structure on one side and to a drift region on another side. The drift region includes dopants of a first conductivity type. The control cell includes: a mesa extending along a vertical direction and including a contact region having dopants of the first or second conductivity type and electrically connected to the load terminal structure, and a channel region coupled to the drift region; a control electrode configured to control a conduction channel in the channel region; and a contact plug including at least one of a doped semiconductive material or metal, and arranged in contact with the contact region. An electrical connection between the contact region and load terminal structure is established by the contact plug, a portion of which horizontally projects beyond lateral boundaries of the mesa.

公开(公告)号：US11322587B2

公开(公告)日：2022-05-03

申请号：US16900882

申请日：2020-06-13

申请人： Infineon Technologies Dresden GmbH & Co. KG

发明人： Hans-Juergen Thees ,  Stefan Loesch ,  Marc Probst ,  Tom Richter ,  Olaf Storbeck

IPC分类号： H01L29/06 ,  H01L29/739 ,  H01L29/66

摘要： A power semiconductor device includes a control cell for controlling a load current. The control cell is electrically connected to a load terminal structure on one side and to a drift region on another side. The drift region includes dopants of a first conductivity type. The control cell includes: a mesa extending along a vertical direction and including: a contact region having dopants of the first conductivity type or of a second conductivity type and electrically connected to the load terminal structure, and a channel region coupled to the drift region; a control electrode configured to induce a conduction channel in the channel region; and a contact plug including a doped semiconductive material and arranged in contact with the contact region. An electrical connection between the contact region and load terminal structure is established by the contact plug, a portion of which projects beyond lateral boundaries of the mesa.