公开(公告)号：US20240194695A1

公开(公告)日：2024-06-13

申请号：US18502025

申请日：2023-11-05

Applicant: InnoLux Corporation

Inventor： Cheng-Yu YANG ,  Yi-Shiuan CHERNG ,  Chih-Hao CHANG ,  Chia-Hao TSAI

IPC: H01L27/12

CPC classification number: H01L27/1244

Abstract: An electronic device is provided. The electronic device includes a substrate, a data line and a gate line that are disposed on the substrate. The data line extends in a first direction. The electronic device also includes a thin film transistor. The thin film transistor is disposed on the substrate and includes a semiconductor structure. The semiconductor structure includes a channel region, a source region, and a drain region. The gate line overlaps the channel region. The source region is electrically connected to the data line. The source region and the drain region are located on opposite sides of the gate line. The source region includes a first portion extending in a second direction, and an acute angle is formed between the first direction and the second direction.

公开(公告)号：US20240021623A1

公开(公告)日：2024-01-18

申请号：US18208315

申请日：2023-06-12

Applicant: InnoLux Corporation

Inventor： Cheng-Yu YANG ,  Chih-Hao CHANG ,  Chia-Hao TSAI

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/1251

Abstract: An electronic device is provided by the present disclosure. The electronic device includes a substrate; a first transistor disposed on the substrate and including a first semiconductor layer and a gate electrode; a first insulating layer disposed between the first semiconductor layer and the gate electrode; a second insulating layer disposed on the first insulating layer, wherein the first semiconductor layer and the gate electrode are located between the substrate and the second insulating layer; a barrier layer disposed on the second insulating layer; and a second transistor disposed on the barrier layer and including a second semiconductor layer, wherein the barrier layer is disposed between the second semiconductor layer and the second insulating layer.