公开(公告)号：US20210349222A1

公开(公告)日：2021-11-11

申请号：US17379969

申请日：2021-07-19

Applicant: InnoLux Corporation

Inventor： Zhi-Hong Wang ,  Hsin-Hung Lin ,  Chih-Hao Wu

IPC: G01T1/24 ,  H01L27/146

Abstract: A radiation sensing device is provided in the present disclosure. The radiation sensing device includes a substrate and a plurality of semiconductor units. The semiconductor units are disposed on the substrate, and at least one of the semiconductor units includes a first gate electrode, an active layer, and a second gate electrode. The active layer is disposed on the first gate electrode, and the second gate electrode is disposed on the active layer. The second gate electrode has a positive bias voltage during a standby mode. The second electrode may be configured to have a positive bias voltage during the standby mode for improving influence on electrical properties of the semiconductor unit after the semiconductor unit is irradiated by radiation.

公开(公告)号：US11099284B2

公开(公告)日：2021-08-24

申请号：US15930452

申请日：2020-05-13

Applicant: InnoLux Corporation

Inventor： Zhi-Hong Wang ,  Hsin-Hung Lin ,  Chih-Hao Wu

IPC: G01T1/24 ,  H01L27/146

Abstract: A radiation sensing device is provided in the present disclosure. The radiation sensing device includes a substrate and a plurality of semiconductor units. The semiconductor units are disposed on the substrate, and at least one of the semiconductor units includes a first gate electrode, an active layer, and a second gate electrode. The active layer is disposed on the first gate electrode, and the second gate electrode is disposed on the active layer. The second gate electrode has a positive bias voltage during a standby mode. The second electrode may be configured to have a positive bias voltage during the standby mode for improving influence on electrical properties of the semiconductor unit after the semiconductor unit is irradiated by radiation.

公开(公告)号：US11686866B2

公开(公告)日：2023-06-27

申请号：US17379969

申请日：2021-07-19

Applicant: InnoLux Corporation

Inventor： Zhi-Hong Wang ,  Hsin-Hung Lin ,  Chih-Hao Wu

IPC: G01T1/24 ,  H01L27/146

CPC classification number: G01T1/241 ,  G01T1/247 ,  H01L27/14614

Abstract: A radiation sensing device is provided in the present disclosure. The radiation sensing device includes a substrate and a plurality of semiconductor units. The semiconductor units are disposed on the substrate, and at least one of the semiconductor units includes a first gate electrode, an active layer, and a second gate electrode. The active layer is disposed on the first gate electrode, and the second gate electrode is disposed on the active layer. The second gate electrode has a positive bias voltage during a standby mode. The second electrode may be configured to have a positive bias voltage during the standby mode for improving influence on electrical properties of the semiconductor unit after the semiconductor unit is irradiated by radiation.

公开(公告)号：US20200371260A1

公开(公告)日：2020-11-26

申请号：US15930452

申请日：2020-05-13

Applicant: InnoLux Corporation

Inventor： Zhi-Hong Wang ,  Hsin-Hung Lin ,  Chih-Hao Wu

IPC: G01T1/24 ,  H01L27/146

Abstract: A radiation sensing device is provided in the present disclosure. The radiation sensing device includes a substrate and a plurality of semiconductor units. The semiconductor units are disposed on the substrate, and at least one of the semiconductor units includes a first gate electrode, an active layer, and a second gate electrode. The active layer is disposed on the first gate electrode, and the second gate electrode is disposed on the active layer. The second gate electrode has a positive bias voltage during a standby mode. The second electrode may be configured to have a positive bias voltage during the standby mode for improving influence on electrical properties of the semiconductor unit after the semiconductor unit is irradiated by radiation.