公开(公告)号：US20030146689A1

公开(公告)日：2003-08-07

申请号：US10067616

申请日：2002-02-04

Applicant: InnoSys, Inc.

Inventor： Ruey-Jen Hwu ,  Larry Sadwick

IPC: H01J001/62

CPC classification number: H01J1/46 ,  H01J1/13 ,  H01J3/027 ,  H01J19/38 ,  H01J21/105

Abstract: A solid-state vacuum device (SSVD) and method for making the same. In one embodiment, the SSVD forms a triode device comprising a substrate having a cavity formed therein. The SSVD further comprises cathode positioned near the opening of the cavity, wherein the cathode spans over the cavity in the form of a bridge that creates an air gap between the cathode and substrate. In addition, the SSVD further comprises an anode and a grid that is positioned between the anode and cathode. Upon applying heat to the cathode, electrons are released from the cathode, passed through the grid, and received by the anode. In response to receiving the electrons, the anode produces a current. The current received by the anode is controlled by a voltage applied to the grid. Other embodiments of the present invention provide diode, tetrode, pentode, and other higher order device configurations.

Abstract translation: 固态真空装置（SSVD）及其制造方法。 在一个实施例中，SSVD形成三极管器件，其包括其中形成有腔的衬底。 SSVD还包括位于空腔开口附近的阴极，其中阴极以桥形式跨越空腔，在阴极和衬底之间产生气隙。 另外，SSVD还包括位于阳极和阴极之间的阳极和栅极。 在向阴极施加热量时，电子从阴极释放，通过栅格并被阳极接收。 响应于接收电子，阳极产生电流。 由阳极接收的电流由施加到电网的电压控制。 本发明的其它实施例提供二极管，四极管，五极管和其它高阶器件配置。