公开(公告)号：US20220102279A1

公开(公告)日：2022-03-31

申请号：US17131701

申请日：2020-12-22

Applicant: Intel Corporation

Inventor： Atul MADHAVAN ,  Abhishek JAIN ,  Jinhong SHIN ,  Anant H. JAHAGIRDAR

IPC: H01L23/538 ,  H01L23/498 ,  H01L21/768

Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication. In an example, an integrated circuit structure includes a single dielectric layer above a substrate. A plurality of conductive lines is in an upper portion of the single dielectric layer above a lower portion of the single dielectric layer. A carbon dopant region is in the upper portion of the single dielectric layer, the carbon dopant region between adjacent ones of the plurality of conductive lines.