公开(公告)号：US20220199472A1

公开(公告)日：2022-06-23

申请号：US17132995

申请日：2020-12-23

Applicant: Intel Corporation

Inventor： Robin Chao ,  Bishwajeet Guha ,  Brian Greene ,  Chung-Hsun Lin ,  Curtis Tsai ,  Orb Acton

IPC: H01L21/8234 ,  H01L27/088 ,  H01L27/12 ,  H01L21/84

Abstract: Integrated circuitry comprising high voltage (HV) and low voltage (LV) ribbon or wire (RoW) transistor stack structures. In some examples, a gate electrode of the HV and LV transistor stack structures may include the same work function metal. A metal oxide may be deposited around one or more channels of the HV transistor stack, thereby altering the dipole properties of the gate insulator stack from those of the LV transistor stack structure.