公开(公告)号：US11443983B2

公开(公告)日：2022-09-13

申请号：US16139241

申请日：2018-09-24

Applicant: Intel Corporation

Inventor： Shaestagir Chowdhury ,  Sirikarn Surawanvijit ,  Biswadeep Saha ,  Erica J. Thompson

IPC: H01L21/768 ,  H01L21/3213 ,  H01L23/532 ,  C22C19/03 ,  C22C19/07 ,  H01L23/522 ,  C09K13/00

Abstract: An integrated circuit structure comprises a dielectric layer on a substrate. An open structure is in the dielectric layer, and a void-free metal-alloy interconnect is formed in the open structure, wherein the void-free metal-alloy interconnect comprise a metal-alloy comprising a combination of two or more metallic elements excluding any mixing effects of a seed layer or liner deposited in the open structure prior to a metal fill material, and excluding effects of any doping material on the metal fill material.