公开(公告)号：US20220199838A1

公开(公告)日：2022-06-23

申请号：US17133056

申请日：2020-12-23

Applicant: Intel Corporation

Inventor： Chelsey Dorow ,  Kevin O'Brien ,  Carl Naylor ,  Uygar Avci ,  Sudarat Lee ,  Ashish Verma Penumatcha ,  Chia-Ching LIn ,  Tanay Gosavi ,  Shriram Shivaraman ,  Kirby Maxey

IPC: H01L29/786 ,  H01L29/06 ,  H01L23/29 ,  H01L21/8238

Abstract: A transistor includes a channel layer including a transition metal dichalcogenide (TMD) material, an encapsulation layer on a first portion of the channel layer, a gate electrode above the encapsulation layer, a gate dielectric layer between the gate electrode and the encapsulation layer. The transistor further includes a source contact on a second portion of the channel layer and a drain contact on a third portion of the channel layer, where the gate structure is between drain contact and the source contact.