公开(公告)号：US20220102210A1

公开(公告)日：2022-03-31

申请号：US17033483

申请日：2020-09-25

Applicant: Intel Corporation

Inventor： Paul A. NYHUS ,  Charles H. WALLACE ,  Manish CHANDHOK ,  Mohit K. HARAN ,  Gurpreet SINGH ,  Eungnak HAN ,  Florian GSTREIN ,  Richard E. SCHENKER ,  David SHYKIND ,  Jinnie ALOYSIUS ,  Sean PURSEL

IPC: H01L21/768 ,  H01L27/088 ,  H01L23/522 ,  H01L23/532

Abstract: Contact over active gate (COAG) structures are described. In an example, an integrated circuit structure includes a plurality of gate structures above substrate, each of the gate structures including a gate insulating layer thereon. A plurality of conductive trench contact structures is alternating with the plurality of gate structures, each of the conductive trench contact structures including a trench insulating layer thereon. A remnant of a di-block-co-polymer is over a portion of the plurality of gate structures or the plurality of conductive trench contact structures. An interlayer dielectric material is over the di-block-co-polymer, over the plurality of gate structures, and over the plurality of conductive trench contact structures. An opening in the interlayer dielectric material. A conductive structure is in the opening, the conductive structure in direct contact with a corresponding one of the trench contact structures or with a corresponding one of the gate contact structures.