公开(公告)号：US20190267961A1

公开(公告)日：2019-08-29

申请号：US16348830

申请日：2016-12-29

Applicant: Intel Corporation

Inventor： Kevin LIN ,  Kimin JUN ,  Edris MOHAMMED

IPC: H03H3/02 ,  H03H9/17

Abstract: The RF filters used in conventional mobile devices often include resonator structures, which often require free-standing air-gap structure to prevent mechanical vibrations of the resonator from being damped by a bulk material. A method for fabricating a resonator structure comprises depositing a non-conformal thin-film to the resonator structure to seal air gap cavities in the resonator structure.

公开(公告)号：US20190259806A1

公开(公告)日：2019-08-22

申请号：US16347724

申请日：2016-12-28

Applicant: Intel Corporation

Inventor： Paul FISCHER ,  Sansaptak DASGUPTA ,  Marko RADOSAVLJEVIC ,  Han Wui THEN ,  Edris MOHAMMED

IPC: H01L27/20 ,  H03H3/08 ,  H03H9/02 ,  H03H9/10 ,  H03H9/145 ,  H03H9/25

Abstract: A surface acoustic wave (SAW) resonator structure, an integrated circuit, and a method of fabricating a SAW structure are provided. The method includes epitaxially growing a crystalline aluminum nitride piezoelectric film layer on a substrate; and deposing a plurality of electrodes on the piezoelectric film layer. The SAW structure includes a substrate, a piezoelectric film on the substrate, and a plurality of electrodes on the piezoelectric film.