公开(公告)号：US20240421002A1

公开(公告)日：2024-12-19

申请号：US18333758

申请日：2023-06-13

Applicant: Intel Corporation

Inventor： Hwichan Jun ,  Edward Yeh ,  Robin Chao

IPC: H01L21/8234 ,  H01L27/088

Abstract: An IC device includes a gate electrode having multiple lengths. The length of a first portion of the gate electrode, which is over a channel region in a semiconductor structure, may be longer (e.g., about 0.5-3 nm longer) than the length of a second portion of the gate electrode, which is over a channel region in another semiconductor structure. The pitches at the two portions of the gate electrode may be the same or substantially similar. The lengths of the gate electrode can be differentiated by using dry clean based removal of a dielectric material surrounding the semiconductor structures. A larger amount of the dielectric material may be removed at a first region than a second region so that the gap at the first region can be longer than the gap at the second region. A conductive material may be provided to fill the gaps to form the gate electrode.