公开(公告)号：US20230155550A1

公开(公告)日：2023-05-18

申请号：US17530250

申请日：2021-11-18

Applicant: Intel Corporation

Inventor： Gary A. Allen ,  Tanay A. Gosavi ,  Raseong Kim ,  Dmitri Evgenievich Nikonov ,  Ian Alexander Young

IPC: H03B5/36 ,  H03H9/17

CPC classification number: H03B5/36 ,  H03H9/178 ,  H03L7/099

Abstract: In one embodiment, a piezo-resistive resonator device includes one or more drive transistors with source and drain regions in a first well and a sense transistor with source and drain regions in a second well of opposite polarity than the first well. The gates of the drive and sense transistor are connected to a first direct current (DC) source. The drain region of the sense transistor is connected to a second DC source, and the source and drain regions of the drive transistor are connected to an alternating current (AC) source.