公开(公告)号：US11538803B2

公开(公告)日：2022-12-27

申请号：US16221086

申请日：2018-12-14

Applicant: Intel Corporation

Inventor： Gilbert Dewey ,  Telesphor Kamgaing ,  Aleksandar Aleksov ,  Gerogios Dogiamis ,  Hyung-Jin Lee

IPC: H01L29/40 ,  H01L21/00 ,  H01L27/07 ,  H01L21/8238 ,  H01L23/538 ,  H01L23/00 ,  H01L25/07 ,  H01L29/16 ,  H01L29/20 ,  H01L29/78

Abstract: Embodiments disclosed herein include semiconductor devices and methods of forming such devices. In an embodiment the semiconductor device comprises a first semiconductor layer, where first transistors are fabricated in the first semiconductor layer, and a back end stack over the first transistors. In an embodiment the back end stack comprises conductive traces and vias electrically coupled to the first transistors. In an embodiment, the semiconductor device further comprises a second semiconductor layer over the back end stack, where the second semiconductor layer is a different semiconductor than the first semiconductor layer. In an embodiment, second transistors are fabricated in the second semiconductor layer.