公开(公告)号：US11315644B2

公开(公告)日：2022-04-26

申请号：US17032791

申请日：2020-09-25

Applicant: Intel Corporation

Inventor： Pranav Kalavade ,  Rohit S. Shenoy ,  Golnaz Karbasian

IPC: G11C11/34 ,  G11C16/34 ,  G11C11/56 ,  G11C16/26 ,  G11C16/04

Abstract: A memory device comprising a memory array; and controller circuitry to apply a first pass voltage to a first plurality of unselected wordlines of the memory array during a string current sensing phase; and reduce the first pass voltage applied to the first plurality of unselected wordlines during a multistrobe sensing phase that follows the string current sensing phase.

公开(公告)号：US20220101932A1

公开(公告)日：2022-03-31

申请号：US17032791

申请日：2020-09-25

Applicant: Intel Corporation

Inventor： Pranav Kalavade ,  Rohit S. Shenoy ,  Golnaz Karbasian

IPC: G11C16/34 ,  G11C11/56 ,  G11C16/04 ,  G11C16/26

Abstract: A memory device comprising a memory array; and controller circuitry to apply a first pass voltage to a first plurality of unselected wordlines of the memory array during a string current sensing phase; and reduce the first pass voltage applied to the first plurality of unselected wordlines during a multistrobe sensing phase that follows the string current sensing phase.