公开(公告)号：US12014996B2

公开(公告)日：2024-06-18

申请号：US16914045

申请日：2020-06-26

Applicant: Intel Corporation

Inventor： Mohammad Kabir ,  Conor P. Puls ,  Babita Dhayal ,  Han Li ,  Keith E. Zawadzki ,  Hannes Greve ,  Avyaya Jayanthinarasimham ,  Mukund Bapna ,  Doug B. Ingerly

IPC: H01L23/00 ,  H01L21/762 ,  H01L23/58 ,  H01L27/12

CPC classification number: H01L23/564 ,  H01L21/76251 ,  H01L23/562 ,  H01L23/585 ,  H01L27/1203

Abstract: Moisture hermetic guard ring structures for semiconductor devices, related systems, and methods of fabrication are disclosed. Such devices systems, and methods include a guard ring structure laterally surrounding semiconductor devices of a device layer and metal interconnects of an interconnect layer, the guard ring structure extending through the interconnect layer, the device layer, and a bonding layer adjacent one of the interconnect layer or the device layer the bonding layer, and contacting a support substrate coupled to the bonding layer. Such devices systems, and methods may further include via structures having the same material system as the guard ring structure and also extending through the interconnect, the device, and bonding layers and contacting a support substrate.

公开(公告)号：US20210407932A1

公开(公告)日：2021-12-30

申请号：US16914045

申请日：2020-06-26

Applicant: Intel Corporation

Inventor： Mohammad Kabir ,  Conor P. Puls ,  Babita Dhayal ,  Han Li ,  Keith E. Zawadzki ,  Hannes Greve ,  Avyaya Jayanthinarasimham ,  Mukund Bapna ,  Doug B. Ingerly

IPC: H01L23/00 ,  H01L27/12 ,  H01L23/58 ,  H01L21/762

Abstract: Moisture hermetic guard ring structures for semiconductor devices, related systems, and methods of fabrication are disclosed. Such devices systems, and methods include a guard ring structure laterally surrounding semiconductor devices of a device layer and metal interconnects of an interconnect layer, the guard ring structure extending through the interconnect layer, the device layer, and a bonding layer adjacent one of the interconnect layer or the device layer the bonding layer, and contacting a support substrate coupled to the bonding layer. Such devices systems, and methods may further include via structures having the same material system as the guard ring structure and also extending through the interconnect, the device, and bonding layers and contacting a support substrate.

公开(公告)号：US20240145410A1

公开(公告)日：2024-05-02

申请号：US18404708

申请日：2024-01-04

Applicant: Intel Corporation

Inventor： Mohammad Kabir ,  Conor P. Puls ,  Babita Dhayal ,  Han Li ,  Keith E. Zawadzki ,  Hannes Greve ,  Avyaya Jayanthinarasimham ,  Mukund Bapna ,  Doug B. Ingerly

IPC: H01L23/00 ,  H01L21/762 ,  H01L23/58 ,  H01L27/12

CPC classification number: H01L23/564 ,  H01L21/76251 ,  H01L23/562 ,  H01L23/585 ,  H01L27/1203

Abstract: Moisture hermetic guard ring structures for semiconductor devices, related systems, and methods of fabrication are disclosed. Such devices systems, and methods include a guard ring structure laterally surrounding semiconductor devices of a device layer and metal interconnects of an interconnect layer, the guard ring structure extending through the interconnect layer, the device layer, and a bonding layer adjacent one of the interconnect layer or the device layer the bonding layer, and contacting a support substrate coupled to the bonding layer. Such devices systems, and methods may further include via structures having the same material system as the guard ring structure and also extending through the interconnect, the device, and bonding layers and contacting a support substrate.