公开(公告)号：US20240112951A1

公开(公告)日：2024-04-04

申请号：US17957721

申请日：2022-09-30

Applicant: Intel Corporation

Inventor： Philip Yashar ,  Gokul Malyavanatham ,  Hema Vijwani

IPC: H01L21/768 ,  H01L23/498

CPC classification number: H01L21/76843 ,  H01L21/76867 ,  H01L23/49894

Abstract: Integrated circuit interconnect structures including a niobium-based barrier material. In some embodiments, a layer of essentially niobium may be sputter deposited, for example to a thickness of less than 8 nm at a bottom of an interconnect via. A copper-based fill material may then be deposited over the niobium barrier material. Integrated circuit interconnect metallization may comprise some layers of metallization that have a tantalum-based barrier and other layers of metallization that have a niobium-based barrier.