公开(公告)号：US12176147B2

公开(公告)日：2024-12-24

申请号：US17357385

申请日：2021-06-24

Applicant: Intel Corporation

Inventor： James D. Waldemer ,  Matthieu Giraud-Carrier ,  Bernhard Sell ,  Travis W. Lajoie ,  Wilfred Gomes ,  Abhishek A. Sharma

IPC: H01G4/30 ,  H01G4/005 ,  H01G4/40

Abstract: Disclosed herein are IC structures with three-dimensional capacitors with double metal electrodes provided in a support structure (e.g., a substrate, a die, a wafer, or a chip). An example three-dimensional capacitor includes first and second capacitor electrodes and a capacitor insulator between them. Each capacitor electrode includes a planar portion extending across the support structure and one or more via portions extending into one or more via openings in the support structure. The capacitor insulator also includes a planar portion and a via portion extending into the via opening(s). The planar portion of the capacitor electrodes are thicker than the via portions. Each capacitor electrode may be deposited using two deposition processes, such as a conformal deposition process for depositing the via portion of the electrode, and a sputter process for depositing the planar portion of the electrode.

公开(公告)号：US20220415573A1

公开(公告)日：2022-12-29

申请号：US17357385

申请日：2021-06-24

Applicant: Intel Corporation

Inventor： James D. Waldemer ,  Matthieu Giraud-Carrier ,  Bernhard Sell ,  Travis W. Lajoie ,  Wilfred Gomes ,  Abhishek A. Sharma

IPC: H01G4/005 ,  H01G4/30 ,  H01G4/40

Abstract: Disclosed herein are IC structures with three-dimensional capacitors with double metal electrodes provided in a support structure (e.g., a substrate, a die, a wafer, or a chip). An example three-dimensional capacitor includes first and second capacitor electrodes and a capacitor insulator between them. Each capacitor electrode includes a planar portion extending across the support structure and one or more via portions extending into one or more via openings in the support structure. The capacitor insulator also includes a planar portion and a via portion extending into the via opening(s). The planar portion of the capacitor electrodes are thicker than the via portions. Each capacitor electrode may be deposited using two deposition processes, such as a conformal deposition process for depositing the via portion of the electrode, and a sputter process for depositing the planar portion of the electrode.