公开(公告)号：US20250113598A1

公开(公告)日：2025-04-03

申请号：US18375314

申请日：2023-09-29

Applicant: Intel Corporation

Inventor： Dan Lavric ,  Jubin Nathawat ,  Orb Acton ,  Michal Mleczko ,  Owen Loh ,  Michael L. Hattendorf

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/20 ,  H01L29/423 ,  H01L29/51

Abstract: An integrated circuit (IC) device includes n- and p-type transistors with and without threshold voltage shifts using a common dopant material in a gate dielectric. The IC device includes at least four threshold voltage for each of n- and p-type transistors. Besides volumeless doping of gate dielectrics, work function metals are used in both n- and p-type transistors. A single dipole dopant may be concurrently introduced into and through similar gate dielectrics in both n- and p-type transistors to achieve consistent threshold voltage shifts with minimal process variation.