公开(公告)号：US20220085778A1

公开(公告)日：2022-03-17

申请号：US17023192

申请日：2020-09-16

Applicant: Intel Corporation

Inventor： Saurabh Anmadwar ,  Dheeraj Shetty ,  Madhuban Kishor

IPC: H03F3/45 ,  H03G5/10 ,  H03G1/00

Abstract: An active current source load of a fully differential amplifier which is converted into a transconductance (gm) component also at higher frequency by feed-forwarding input signals to their gates. With signal coupling to gate, unity gain bandwidth (UGB) of the amplifier increases by a factor of two. In addition to this, the signal is coupled to source as well to achieve three-fold UGB enhancement. Thus, the effective trans-conductance is gmp at dc and becomes gmp+(gmngate+gmnsrc) at high frequency which triples the UGB when gmp=gmngate/src.

公开(公告)号：US11476817B2

公开(公告)日：2022-10-18

申请号：US17023192

申请日：2020-09-16

Applicant: Intel Corporation

Inventor： Saurabh Anmadwar ,  Dheeraj Shetty ,  Madhuban Kishor

IPC: H03F3/45 ,  H03G1/00 ,  H03G5/10

Abstract: An active current source load of a fully differential amplifier which is converted into a transconductance (gm) component also at higher frequency by feed-forwarding input signals to their gates. With signal coupling to gate, unity gain bandwidth (UGB) of the amplifier increases by a factor of two. In addition to this, the signal is coupled to source as well to achieve three-fold UGB enhancement. Thus, the effective trans-conductance is gmp at dc and becomes gmp+(gmngate+gmnsrc) at high frequency which triples the UGB when gmp=gmngate/src.