公开(公告)号：US20240321738A1

公开(公告)日：2024-09-26

申请号：US18125455

申请日：2023-03-23

Applicant: Intel Corporation

Inventor： Leonard P. Guler ,  Prabhjot Kaur Luthra ,  Nidhi Khandelwal ,  Marie T. Conte ,  Saurabh Acharya ,  Shengsi Liu ,  Gary Allen ,  Clifford J. Engel ,  Charles H. Wallace

IPC: H01L23/528 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L23/5283 ,  H01L27/092 ,  H01L29/0665 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/778

Abstract: Techniques to form an integrated circuit having a bridging contact structure. A bridging contact structure may, for example, bridge between source/drain contacts and to an adjacent gate electrode within the same device layer. In an example, a gate cut structure extends in a first direction to separate the source or drain regions and gate structures of neighboring semiconductor devices. Contacts may be formed over the source or drain regions of the neighboring devices on opposite sides of the gate cut along a second direction orthogonal to the first direction. A portion of the gate cut is replaced with a first conductive bridge between the source or drain contacts. A portion of one or more dielectric barriers between one of the source or drain contacts and an adjacent gate electrode is replaced with a second conductive bridge in the first direction between the source or drain contact and the gate structure.