公开(公告)号：US20220084936A1

公开(公告)日：2022-03-17

申请号：US17024507

申请日：2020-09-17

Applicant: Intel Corporation

Inventor： Wei QIAN ,  Cung TRAN ,  Sungbong PARK ,  John HECK ,  Mark ISENBERGER ,  Seth SLAVIN ,  Mengyuan HUANG ,  Kelly MAGRUDER ,  Harel FRISH ,  Reece DEFREES ,  Zhi LI

IPC: H01L23/522 ,  H01L23/528

Abstract: Embedded three-dimensional electrode capacitors, and methods of fabricating three-dimensional electrode capacitors, are described. In an example, an integrated circuit structure includes a first metallization layer above a substrate, the first metallization layer having a first conductive structure in a first dielectric layer, the first conductive structure having a honeycomb pattern. An insulator structure is on the first conductive structure of the first metallization layer. A second metallization layer is above the first metallization layer, the second metallization layer having a second conductive structure in a second dielectric layer, the second conductive structure on the insulator structure, and the second conductive structure having the honeycomb pattern.