公开(公告)号：US20250102740A1

公开(公告)日：2025-03-27

申请号：US18373851

申请日：2023-09-27

Applicant: Intel Corporation

Inventor： Harel FRISH ,  Hari MAHALINGAM ,  Saeed FATHOLOLOUMI ,  Shane YERKES ,  John HECK ,  Wei QIAN

IPC: G02B6/36

Abstract: A device comprising a silicon substrate and a waveguide on the silicon substrate. A groove is in the substrate, the groove having a sloped rear wall adjacent to the waveguide. A trench is in the substrate, the trench along a second direction generally orthogonal to the first direction across the sloped rear wall, the trench having a vertical wall at an intersection with the sloped rear wall. An optical fiber in the groove with one end of the optical fiber abutting the vertical wall.

公开(公告)号：US20240176167A1

公开(公告)日：2024-05-30

申请号：US18071246

申请日：2022-11-29

Applicant: Intel Corporation

Inventor： Benjamin DUONG ,  Kristof DARMAWIKARTA ,  Tolga ACIKALIN ,  Harel FRISH ,  Sandeep GAAN ,  John HECK ,  Eric J. M. MORET ,  Suddhasattwa NAD ,  Haisheng RONG

IPC: G02F1/01 ,  G02B6/125

CPC classification number: G02F1/0113 ,  G02B6/125 ,  G02F1/0147 ,  G02B2006/12145

Abstract: Embodiments disclosed herein include a package substrate. In an embodiment, the package substrate comprises a core where the core comprises glass. In an embodiment, the package substrate further comprises an optical waveguide over the core, and an optical phase change material over the optical waveguide.

公开(公告)号：US20220084936A1

公开(公告)日：2022-03-17

申请号：US17024507

申请日：2020-09-17

Applicant: Intel Corporation

Inventor： Wei QIAN ,  Cung TRAN ,  Sungbong PARK ,  John HECK ,  Mark ISENBERGER ,  Seth SLAVIN ,  Mengyuan HUANG ,  Kelly MAGRUDER ,  Harel FRISH ,  Reece DEFREES ,  Zhi LI

IPC: H01L23/522 ,  H01L23/528

Abstract: Embedded three-dimensional electrode capacitors, and methods of fabricating three-dimensional electrode capacitors, are described. In an example, an integrated circuit structure includes a first metallization layer above a substrate, the first metallization layer having a first conductive structure in a first dielectric layer, the first conductive structure having a honeycomb pattern. An insulator structure is on the first conductive structure of the first metallization layer. A second metallization layer is above the first metallization layer, the second metallization layer having a second conductive structure in a second dielectric layer, the second conductive structure on the insulator structure, and the second conductive structure having the honeycomb pattern.