公开(公告)号：US10438658B2

公开(公告)日：2019-10-08

申请号：US14583547

申请日：2014-12-26

Applicant: INTEL CORPORATION

Inventor： Ningde Xie ,  Robert W. Faber

IPC: G11C13/00

Abstract: Provided is a non-volatile memory device comprising a plurality of memory cells and memory control logic that when executed performs operations comprising initiating a refresh operation; in response to the refresh operation, performing a read of the memory cells to read values of the memory cells; determining whether the read memory cells have a first value or a second value; and for the memory cells determined to have the first value, rewriting the determined first value to the memory cell, wherein the rewriting operation is not performed with respect to memory cells determined to have the second value.

公开(公告)号：US09501405B2

公开(公告)日：2016-11-22

申请号：US14705195

申请日：2015-05-06

Applicant: Intel Corporation

Inventor： Prashant S. Damle ,  Robert W. Faber ,  Ningde Xie

IPC: G06F12/00 ,  G06F12/02

CPC classification number: G06F12/0246 ,  G06F2212/7211

Abstract: Systems and methods of memory cell wear management that can achieve a more uniform distribution of write cycles across a memory cell address space. The systems and methods allow physical addresses of memory cells subjected to a high number of write cycles to be swapped with physical addresses of memory cells subjected to a lower number of write cycles. The physical address of a group of memory cells is a “hot address” if the write cycle count for that memory cell group exceeds a specified threshold. If the write cycle count for a group of memory cells does not exceed the specified threshold, then the physical address of that memory cell group is a “cold address”. The systems and methods allow the specified threshold of write cycle counts to be dynamically incremented to assure that cold addresses are available for swapping with hot addresses in the memory cell address space.

公开(公告)号：US20150309926A1

公开(公告)日：2015-10-29

申请号：US14705195

申请日：2015-05-06

Applicant: Intel Corporation

Inventor： Prashant S. Damle ,  Robert W. Faber ,  Ningde Xie

IPC: G06F12/02

CPC classification number: G06F12/0246 ,  G06F2212/7211

Abstract: Systems and methods of memory cell wear management that can achieve a more uniform distribution of write cycles across a memory cell address space. The systems and methods allow physical addresses of memory cells subjected to a high number of write cycles to be swapped with physical addresses of memory cells subjected to a lower number of write cycles. The physical address of a group of memory cells is a “hot address” if the write cycle count for that memory cell group exceeds a specified threshold. If the write cycle count for a group of memory cells does not exceed the specified threshold, then the physical address of that memory cell group is a “cold address”. The systems and methods allow the specified threshold of write cycle counts to be dynamically incremented to assure that cold addresses are available for swapping with hot addresses in the memory cell address space.

Abstract translation: 可以实现跨存储器单元地址空间的写周期更均匀分布的存储器单元磨损管理的系统和方法。 这些系统和方法允许经受大量写入周期的存储器单元的物理地址与经受较少写入周期的存储器单元的物理地址交换。 如果该存储单元组的写周期计数超过指定的阈值，则一组存储单元的物理地址是“热地址”。 如果一组存储单元的写周期计数不超过指定的阈值，则该存储单元组的物理地址为“冷地址”。 系统和方法允许指定的写周期计数阈值动态增加，以确保冷地址可用于与存储单元地址空间中的热地址进行交换。

公开(公告)号：US09032137B2

公开(公告)日：2015-05-12

申请号：US13682885

申请日：2012-11-21

Applicant: Intel Corporation

Inventor： Prashant S. Damle ,  Robert W. Faber ,  Ningde Xie

IPC: G06F12/02

CPC classification number: G06F12/0246 ,  G06F2212/7211

Abstract: Systems and methods of memory cell wear management that can achieve a more uniform distribution of write cycles across a memory cell address space. The systems and methods allow physical addresses of memory cells subjected to a high number of write cycles to be swapped with physical addresses of memory cells subjected to a lower number of write cycles. The physical address of a group of memory cells is a “hot address” if the write cycle count for that memory cell group exceeds a specified threshold. If the write cycle count for a group of memory cells does not exceed the specified threshold, then the physical address of that memory cell group is a “cold address”. The systems and methods allow the specified threshold of write cycle counts to be dynamically incremented to assure that cold addresses are available for swapping with hot addresses in the memory cell address space.

Abstract translation: 可以实现跨存储器单元地址空间的写周期更均匀分布的存储器单元磨损管理的系统和方法。 这些系统和方法允许经受大量写入周期的存储器单元的物理地址与经受较少写入周期的存储器单元的物理地址交换。 如果该存储单元组的写周期计数超过指定的阈值，则一组存储单元的物理地址是“热地址”。 如果一组存储单元的写周期计数不超过指定的阈值，则该存储单元组的物理地址为“冷地址”。 系统和方法允许指定的写周期计数阈值动态增加，以确保冷地址可用于与存储单元地址空间中的热地址进行交换。