公开(公告)号：US20240290723A1

公开(公告)日：2024-08-29

申请号：US18114120

申请日：2023-02-24

申请人： Intel Corporation

发明人： Jason Gamba ,  Suddhasattwa Nad ,  Sanjay Tharmarajah ,  Rajeev Ranjan ,  Greg Aponte

IPC分类号： H01L23/538 ,  H01L21/768 ,  H01L23/532

CPC分类号： H01L23/5384 ,  H01L21/76834 ,  H01L21/76846 ,  H01L23/5329

摘要： An apparatus comprises a first layer comprising a first dielectric material, and first and second regions on a first side of the first layer. The first regions comprise a first surface in a first plane, and each of the second regions comprise a second surface in a second plane spaced away from the first plane by a first distance. Sidewalls extend between the first surface and the second surfaces. The apparatus further comprises a plurality of conductive features, each conductive feature comprising a bottom surface on one of the second surfaces, and a barrier film comprising a second dielectric material that contacts the sidewalls.

公开(公告)号：US20230085698A1

公开(公告)日：2023-03-23

申请号：US17448288

申请日：2021-09-21

申请人： Intel Corporation

发明人： Kristof Darmawikarta ,  Jung Kyu Han ,  Srinivas Pietambaram ,  Rajeev Ranjan

IPC分类号： H01L23/498 ,  H01L21/48 ,  H01L49/02

摘要： Capacitor pads and methods of manufacturing the same are disclosed herein. An example apparatus disclosed herein includes a substrate to support a die, and a die-side capacitor pad on the substrate, the die-side capacitor pad including a plurality of distinct pad portions, the distinct pad portions spaced apart from one another.